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MDF2N60B-VB Product details

Product introduction:

MDF2N60B-VB MOSFET Product Introduction

MDF2N60B-VB is a high-voltage single N-channel MOSFET in a TO220F package, designed for high-voltage and low-current applications. It has a rated drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 1700mΩ @ VGS=10V, and a drain current (ID) handling capability of 2A. This MOSFET uses planar technology to ensure high withstand voltage and good switching performance, and is suitable for various high-voltage conversion and regulation circuits, such as power management, power regulation modules, etc.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 2A 1700mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 2A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 2A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
MDF2N60B-VB Detailed parameter description

- **Device type**: Single N-channel MOSFET
- **Package**: TO220F
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1700mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar
- **Maximum power dissipation (Pd)**: High power handling capability, package has good heat dissipation performance
- **Reverse recovery time (trr)**: Moderate, support fast switching applications
- **Gate charge (Qg)**: Low, reduce switching losses
- **Operating temperature range**: -55°C ~ 150°C
- **Maximum surge current**: short-term high current carrying capacity
- **ESD tolerance**: high anti-static ability, suitable for harsh industrial environments
- **Thermal resistance**: optimized thermal management and heat dissipation performance

Domain and module applications:

MDF2N60B-VB Applicable Fields and Modules

1. **Switching Power Supply (SMPS)**: The 650V withstand voltage of the MDF2N60B-VB makes it very suitable for use in high-voltage switching mode power supplies, such as industrial and commercial power modules. It can effectively control power conversion, ensure efficient energy transmission and management, and is widely used in consumer electronics and communication equipment power systems.

2. **Power Adapter**: Due to its low on-resistance and 2A current handling capability, the MDF2N60B-VB can be used in **power adapters**, especially in energy-efficient power supply designs. It can operate in low-power mode, reduce power conversion losses, and extend the life of the equipment.

3. **High-voltage Lighting System**: This MOSFET is suitable for **LED lighting drive circuits**, especially in high-voltage applications. It can control constant current drive circuits, improve the energy efficiency of LEDs, and support long-term operation in scenarios such as street lighting and building exterior lighting.

4. **High-voltage power converters**: In **industrial power conversion systems**, the MDF2N60B-VB can handle voltages up to 650V, ensuring reliable voltage regulation and conversion at lower current loads. Suitable for industrial control equipment, HVAC systems, and power modules for solar power generation.

5. **Smart grid equipment**: In smart grids, this MOSFET can be used in **power regulators** to support grid voltage stabilization and high-voltage processing to ensure high efficiency and stability in power transmission. This makes it an ideal choice for high-voltage, low-power applications.

In general, the MDF2N60B-VB is widely used in applications that require high voltage and reliability control, including power management, power regulation, lighting control, and smart grids. In these applications, it can significantly improve the overall efficiency of the system and reduce operating costs with its high withstand voltage and low conduction loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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