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MDF18N50TH-VB Product details
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MDF18N50TH-VB MOSFET Product Introduction
MDF18N50TH-VB is a single N-channel MOSFET in TO220F package with a drain-source voltage (VDS) of up to 650V and a gate voltage (VGS) of 30V, suitable for high-voltage applications. The device uses super junction multi-epitaxial process (SJ_Multi-EPI) technology to provide low on-resistance, with RDS(ON) of only 160mΩ at VGS=10V. Its current carrying capacity of 20A makes it very suitable for high-efficiency power conversion and high-voltage switching applications such as power electronic equipment, industrial power management systems and electric vehicle charging stations.
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MDF18N50TH-VB is a single N-channel MOSFET in TO220F package with a drain-source voltage (VDS) of up to 650V and a gate voltage (VGS) of 30V, suitable for high-voltage applications. The device uses super junction multi-epitaxial process (SJ_Multi-EPI) technology to provide low on-resistance, with RDS(ON) of only 160mΩ at VGS=10V. Its current carrying capacity of 20A makes it very suitable for high-efficiency power conversion and high-voltage switching applications such as power electronic equipment, industrial power management systems and electric vehicle charging stations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
MDF18N50TH-VB Detailed parameter description
- **Device type**: Single N-channel MOSFET
- **Package**: TO220F
- **Technology**: Super Junction Multi-Epitaxial Process (SJ_Multi-EPI)
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**:
- 160mΩ @ VGS = 10V
- **ID (continuous drain current)**: 20A
- **Power dissipation**: Depends on heat dissipation design
- **Operating temperature range**: -55°C to 150°C
- **Features**:
- High voltage operation capability (650V) suitable for high voltage applications
- Low on-resistance for improved system efficiency
- High current carrying capability for high power applications
- Superjunction (SJ) technology for improved device electrical performance
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- **Device type**: Single N-channel MOSFET
- **Package**: TO220F
- **Technology**: Super Junction Multi-Epitaxial Process (SJ_Multi-EPI)
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**:
- 160mΩ @ VGS = 10V
- **ID (continuous drain current)**: 20A
- **Power dissipation**: Depends on heat dissipation design
- **Operating temperature range**: -55°C to 150°C
- **Features**:
- High voltage operation capability (650V) suitable for high voltage applications
- Low on-resistance for improved system efficiency
- High current carrying capability for high power applications
- Superjunction (SJ) technology for improved device electrical performance
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Domain and module applications：
Applications and module examples
1. **Power electronics and industrial power management**:
The MDF18N50TH-VB is ideal for high-power industrial power management systems such as switch mode power supplies (SMPS), inverters, and power factor correction (PFC) circuits. Its high withstand voltage of 650V and high current carrying capacity of 20A enable it to excel in high-voltage and high-current industrial equipment, helping to improve the energy efficiency and reliability of the system.
2. **Electric vehicle (EV) charging stations and battery management systems**:
As electric vehicle technology develops, battery management systems and charging stations require more efficient power switching devices. The high voltage and high current characteristics of the MDF18N50TH-VB make it an ideal choice to optimize the charging process, reduce losses, and ensure that electric vehicles are charged quickly and safely.
3. **Solar inverters and energy storage systems**:
In solar power conversion and energy storage systems, the MDF18N50TH-VB can be used to improve the conversion efficiency of DC to AC power, and is suitable for solar inverters and energy storage devices. Its high-voltage carrying capacity is suitable for handling the output voltage of large-scale solar arrays.
4. **Home appliances and lighting control systems**:
Home appliances such as air conditioners, refrigerators, and efficient lighting systems require high-voltage MOSFETs to optimize power management. The low conduction loss and efficient switching characteristics of the MDF18N50TH-VB enable it to help reduce energy consumption, improve the energy efficiency level of products, and meet the needs of modern smart home devices.
5. **Industrial automation and motor control**:
In industrial automation applications, such as PLCs (programmable logic controllers), servo drives, and stepper motor controllers, the MDF18N50TH-VB can be used as an efficient power switching element to provide reliable high-voltage control, which helps reduce power losses in the system and improves response speed.
The MDF18N50TH-VB is a high voltage, low loss N-channel MOSFET suitable for use in modern power conversion systems requiring high efficiency and high power density.
1. **Power electronics and industrial power management**:
The MDF18N50TH-VB is ideal for high-power industrial power management systems such as switch mode power supplies (SMPS), inverters, and power factor correction (PFC) circuits. Its high withstand voltage of 650V and high current carrying capacity of 20A enable it to excel in high-voltage and high-current industrial equipment, helping to improve the energy efficiency and reliability of the system.
2. **Electric vehicle (EV) charging stations and battery management systems**:
As electric vehicle technology develops, battery management systems and charging stations require more efficient power switching devices. The high voltage and high current characteristics of the MDF18N50TH-VB make it an ideal choice to optimize the charging process, reduce losses, and ensure that electric vehicles are charged quickly and safely.
3. **Solar inverters and energy storage systems**:
In solar power conversion and energy storage systems, the MDF18N50TH-VB can be used to improve the conversion efficiency of DC to AC power, and is suitable for solar inverters and energy storage devices. Its high-voltage carrying capacity is suitable for handling the output voltage of large-scale solar arrays.
4. **Home appliances and lighting control systems**:
Home appliances such as air conditioners, refrigerators, and efficient lighting systems require high-voltage MOSFETs to optimize power management. The low conduction loss and efficient switching characteristics of the MDF18N50TH-VB enable it to help reduce energy consumption, improve the energy efficiency level of products, and meet the needs of modern smart home devices.
5. **Industrial automation and motor control**:
In industrial automation applications, such as PLCs (programmable logic controllers), servo drives, and stepper motor controllers, the MDF18N50TH-VB can be used as an efficient power switching element to provide reliable high-voltage control, which helps reduce power losses in the system and improves response speed.
The MDF18N50TH-VB is a high voltage, low loss N-channel MOSFET suitable for use in modern power conversion systems requiring high efficiency and high power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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