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MDF11N60-VB Product details
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MDF11N60-VB MOSFET Product Introduction
MDF11N60-VB is a high-voltage single N-channel MOSFET in a TO220F package, designed for high voltage and high power applications. With a drain-source voltage (VDS) of 650V, this MOSFET can cope with demanding industrial power supply requirements. Its gate-source voltage (VGS) range is ±30V, suitable for a variety of control circuits. The threshold voltage (Vth) is 3.5V, ensuring stable conduction at a suitable gate-source voltage. The on-resistance (RDS(ON)) of MDF11N60-VB is only 320mΩ at a VGS of 10V, and the maximum drain current (ID) is 20A, fully meeting the requirements of efficient power conversion. The device uses planar process technology (Plannar), which effectively reduces switching losses and improves system efficiency, and is widely used in various high-voltage power electronic equipment.
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MDF11N60-VB is a high-voltage single N-channel MOSFET in a TO220F package, designed for high voltage and high power applications. With a drain-source voltage (VDS) of 650V, this MOSFET can cope with demanding industrial power supply requirements. Its gate-source voltage (VGS) range is ±30V, suitable for a variety of control circuits. The threshold voltage (Vth) is 3.5V, ensuring stable conduction at a suitable gate-source voltage. The on-resistance (RDS(ON)) of MDF11N60-VB is only 320mΩ at a VGS of 10V, and the maximum drain current (ID) is 20A, fully meeting the requirements of efficient power conversion. The device uses planar process technology (Plannar), which effectively reduces switching losses and improves system efficiency, and is widely used in various high-voltage power electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- Has good heat dissipation performance and is suitable for high power applications.
- **Configuration**: Single N-channel
- Provides a single conductive channel to simplify drive design.
- **VDS (drain-source voltage)**: 650V
- Suitable for high voltage power supply and inverter applications.
- **VGS (gate-source voltage)**: ±30V
- Provides a flexible gate drive voltage range.
- **Vth (threshold voltage)**: 3.5V
- Ensures stable conduction under appropriate gate-source voltage.
- **RDS(ON) @ VGS = 10V**: 320mΩ
- Lower on-resistance helps reduce energy loss and heat generation.
- **ID (maximum continuous drain current)**: 20A
- Suitable for medium and high power load applications.
- **Technology**: Plannar
- Provides excellent electrical characteristics and switching performance.
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- **Package type**: TO220F
- Has good heat dissipation performance and is suitable for high power applications.
- **Configuration**: Single N-channel
- Provides a single conductive channel to simplify drive design.
- **VDS (drain-source voltage)**: 650V
- Suitable for high voltage power supply and inverter applications.
- **VGS (gate-source voltage)**: ±30V
- Provides a flexible gate drive voltage range.
- **Vth (threshold voltage)**: 3.5V
- Ensures stable conduction under appropriate gate-source voltage.
- **RDS(ON) @ VGS = 10V**: 320mΩ
- Lower on-resistance helps reduce energy loss and heat generation.
- **ID (maximum continuous drain current)**: 20A
- Suitable for medium and high power load applications.
- **Technology**: Plannar
- Provides excellent electrical characteristics and switching performance.
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Domain and module applications：
Applications and modules
1. **Switching Power Supply (SMPS)**: MDF11N60-VB is widely used in switching power supplies, suitable for handling high voltage input and output, and can effectively convert and manage electrical energy to improve system efficiency.
2. **Industrial Inverter**: In inverters for renewable energy sources such as solar and wind power, this MOSFET can perform effective power conversion under high voltage conditions and support efficient energy management.
3. **Motor Control System**: This MOSFET can be used as a switching element in the motor drive system, suitable for high voltage and high current motor control, helping to improve the performance and response speed of the motor.
4. **Electric Vehicle (EV) Charging System**: MDF11N60-VB is suitable for the charging management module of electric vehicles, which can achieve efficient and safe current switching during the charging process.
5. **High-power lighting control**: In high-power LED lighting systems, this MOSFET can be used as a high-voltage switch to support complex lighting control schemes and improve the efficiency and reliability of lighting equipment.
6. **Uninterruptible power supply (UPS)**: In UPS systems, MDF11N60-VB can be used as a high-voltage switching element to ensure reliable switching to backup power and provide continuous power in the event of a power failure.
In summary, as a high-voltage, high-power N-channel MOSFET, MDF11N60-VB is widely used in many fields such as switching power supplies, inverters, motor control, electric vehicles, lighting control and uninterruptible power supplies. Its excellent electrical performance and heat dissipation characteristics make it an important choice for efficient power electronics design.
1. **Switching Power Supply (SMPS)**: MDF11N60-VB is widely used in switching power supplies, suitable for handling high voltage input and output, and can effectively convert and manage electrical energy to improve system efficiency.
2. **Industrial Inverter**: In inverters for renewable energy sources such as solar and wind power, this MOSFET can perform effective power conversion under high voltage conditions and support efficient energy management.
3. **Motor Control System**: This MOSFET can be used as a switching element in the motor drive system, suitable for high voltage and high current motor control, helping to improve the performance and response speed of the motor.
4. **Electric Vehicle (EV) Charging System**: MDF11N60-VB is suitable for the charging management module of electric vehicles, which can achieve efficient and safe current switching during the charging process.
5. **High-power lighting control**: In high-power LED lighting systems, this MOSFET can be used as a high-voltage switch to support complex lighting control schemes and improve the efficiency and reliability of lighting equipment.
6. **Uninterruptible power supply (UPS)**: In UPS systems, MDF11N60-VB can be used as a high-voltage switching element to ensure reliable switching to backup power and provide continuous power in the event of a power failure.
In summary, as a high-voltage, high-power N-channel MOSFET, MDF11N60-VB is widely used in many fields such as switching power supplies, inverters, motor control, electric vehicles, lighting control and uninterruptible power supplies. Its excellent electrical performance and heat dissipation characteristics make it an important choice for efficient power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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