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MDD6N60G-VB Product details
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MDD6N60G-VB MOSFET Product Introduction
The MDD6N60G-VB is a high-performance **single N-channel MOSFET** in a **TO252 package**, designed for high-voltage applications. It has a rated drain-source voltage (VDS) of up to **650V**, can withstand gate-source voltages (VGS) of up to **±30V**, and has a threshold voltage (Vth) of **3.5V**. The device has an on-resistance (RDS(ON)) of **1000mΩ** at a **10V** gate-source voltage, suitable for handling drain currents (ID) of up to **5A**. Using **SJ_Multi-EPI technology**, the MDD6N60G-VB has good thermal performance and current handling capabilities while ensuring high switching frequency and low switching losses. These features enable it to perform well in high-voltage and high-power applications such as switching power supplies, inverters, and motor drives.
The MDD6N60G-VB is a high-performance **single N-channel MOSFET** in a **TO252 package**, designed for high-voltage applications. It has a rated drain-source voltage (VDS) of up to **650V**, can withstand gate-source voltages (VGS) of up to **±30V**, and has a threshold voltage (Vth) of **3.5V**. The device has an on-resistance (RDS(ON)) of **1000mΩ** at a **10V** gate-source voltage, suitable for handling drain currents (ID) of up to **5A**. Using **SJ_Multi-EPI technology**, the MDD6N60G-VB has good thermal performance and current handling capabilities while ensuring high switching frequency and low switching losses. These features enable it to perform well in high-voltage and high-power applications such as switching power supplies, inverters, and motor drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
MDD6N60G-VB Detailed parameter description
- **Device type**: Single N-channel MOSFET
- **Package**: TO252
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Reverse recovery time (trr)**: short
- **Gate charge (Qg)**: low
- **Thermal resistance (Rth)**: Optimized thermal resistance performance, improved heat dissipation capability
- **Maximum power dissipation (Pd)**: High power handling capability
- **Operating temperature range**: -55°C ~ 150°C
- **Heat management**: Good thermal management, reducing power loss
- **Device type**: Single N-channel MOSFET
- **Package**: TO252
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Reverse recovery time (trr)**: short
- **Gate charge (Qg)**: low
- **Thermal resistance (Rth)**: Optimized thermal resistance performance, improved heat dissipation capability
- **Maximum power dissipation (Pd)**: High power handling capability
- **Operating temperature range**: -55°C ~ 150°C
- **Heat management**: Good thermal management, reducing power loss
Domain and module applications：
MDD6N60G-VB Applicable Fields and Modules
1. **Switching Mode Power Supply (SMPS)**: MDD6N60G-VB is particularly suitable for **Switching Mode Power Supply** (SMPS), which can efficiently process DC output from AC power supply. This MOSFET plays a core role in SMPS, ensuring the stability and efficiency of power conversion, and is widely used in computer power supplies, TV power supplies, and power modules of various consumer electronic products.
2. **High Voltage Inverter**: The 650V withstand voltage characteristics of this device make it an ideal choice for **High Voltage Inverter** design. It can be used in solar inverters, wind power inverters, etc., which can convert DC power into AC power to meet the power needs of homes and industries. These inverters usually need to handle high voltages and high currents, and MDD6N60G-VB can maintain excellent performance in such environments.
3. **Motor drive control**: The MDD6N60G-VB is widely used in **motor drive** circuits, especially in applications that require high voltage and high current, such as industrial automation and robotics. This MOSFET excels in controlling the start, run, and stop of motors, and its low on-resistance helps reduce energy loss and improve the overall efficiency of the system.
4. **Lighting control systems**: The device is also suitable for **LED lighting control** and smart lighting solutions. Its high withstand voltage characteristics can meet the needs of various lighting applications, such as street lighting and exterior lighting of buildings, while reducing power consumption and extending the service life of LEDs.
5. **High-voltage power converter**: In high-voltage power converters, the MDD6N60G-VB can effectively handle input voltages up to 650V, making it suitable for industrial power modules and other applications that require high voltage and high power, ensuring the stability and reliability of the power system.
In summary, MDD6N60G-VB is widely used in switching power supplies, high-voltage inverters, motor drives, lighting control, high-voltage power conversion and other fields due to its high voltage, high power handling capabilities and excellent energy efficiency performance, making it an ideal choice for efficient energy management and conversion.
1. **Switching Mode Power Supply (SMPS)**: MDD6N60G-VB is particularly suitable for **Switching Mode Power Supply** (SMPS), which can efficiently process DC output from AC power supply. This MOSFET plays a core role in SMPS, ensuring the stability and efficiency of power conversion, and is widely used in computer power supplies, TV power supplies, and power modules of various consumer electronic products.
2. **High Voltage Inverter**: The 650V withstand voltage characteristics of this device make it an ideal choice for **High Voltage Inverter** design. It can be used in solar inverters, wind power inverters, etc., which can convert DC power into AC power to meet the power needs of homes and industries. These inverters usually need to handle high voltages and high currents, and MDD6N60G-VB can maintain excellent performance in such environments.
3. **Motor drive control**: The MDD6N60G-VB is widely used in **motor drive** circuits, especially in applications that require high voltage and high current, such as industrial automation and robotics. This MOSFET excels in controlling the start, run, and stop of motors, and its low on-resistance helps reduce energy loss and improve the overall efficiency of the system.
4. **Lighting control systems**: The device is also suitable for **LED lighting control** and smart lighting solutions. Its high withstand voltage characteristics can meet the needs of various lighting applications, such as street lighting and exterior lighting of buildings, while reducing power consumption and extending the service life of LEDs.
5. **High-voltage power converter**: In high-voltage power converters, the MDD6N60G-VB can effectively handle input voltages up to 650V, making it suitable for industrial power modules and other applications that require high voltage and high power, ensuring the stability and reliability of the power system.
In summary, MDD6N60G-VB is widely used in switching power supplies, high-voltage inverters, motor drives, lighting control, high-voltage power conversion and other fields due to its high voltage, high power handling capabilities and excellent energy efficiency performance, making it an ideal choice for efficient energy management and conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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