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MDD2605RH-VB Product details

Product introduction:

1. MDD2605RH-VB Product Introduction
MDD2605RH-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for applications requiring low on-resistance and high current handling capability. The device has a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, making it suitable for use in a variety of power management and switching applications. Its on-resistance (RDS(ON)) is 6mΩ at a VGS of 4.5V and drops to 5mΩ at a VGS of 10V, which makes this MOSFET perform well at high frequencies and high currents, significantly reducing power consumption and improving system efficiency. Therefore, the MDD2605RH-VB is an ideal choice for applications such as power conversion, motor drive, and load switching.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 80A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. MDD2605RH-VB Detailed parameter description
- **Model**: MDD2605RH-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- When VGS=4.5V: 6mΩ
- When VGS=10V: 5mΩ
- **Maximum drain current (ID)**: 80A
- **Technology type**: Trench
- **Maximum power consumption**: 175W (typical)
- **Operating temperature range**: -55°C ~ +150°C

Domain and module applications:

III. Application fields and module examples
The high performance characteristics of MDD2605RH-VB make it suitable for multiple fields and modules, as follows:

1. **Power management system**: In switching power supplies (SMPS) and DC-DC converters, this MOSFET can effectively reduce conduction losses and improve power efficiency, and is suitable for notebook power adapters and server power modules.

2. **Load switch control**: MDD2605RH-VB can be used for switch control of high-power loads, such as achieving efficient power distribution and protection functions in industrial equipment, power tools, etc.

3. **Motor control system**: This device performs well in motor drives and can handle large operating currents. It is suitable for electric vehicles, robots, and home appliance motor control.

4. **Battery management system (BMS)**: In battery charge and discharge control, the low on-resistance and high current capability of MDD2605RH-VB can effectively improve the efficiency and life of the battery, especially for electric vehicles and energy storage systems.

5. **Automotive Electronics Module**: This MOSFET is suitable for use in automotive electronics fields, such as power distribution, lighting control and electronic load switching, to improve the overall efficiency and reliability of the automotive electrical system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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