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MDD2601RH-VB Product details
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MDD2601RH-VB MOSFET Product Introduction
MDD2601RH-VB is a single N-channel MOSFET in TO252 package with high performance drain-source voltage (VDS) of 30V, gate voltage (VGS) of ±20V, and trench technology (Trench) to reduce on-resistance. The on-resistance (RDS(ON)) of this MOSFET is only 3mΩ at VGS=4.5V, and is as low as 2mΩ at VGS=10V, capable of supporting drain current (ID) of up to 100A. This low on-resistance and high current carrying capability make the MDD2601RH-VB ideal for efficient power management and fast switching applications, especially in systems requiring high power density.
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MDD2601RH-VB is a single N-channel MOSFET in TO252 package with high performance drain-source voltage (VDS) of 30V, gate voltage (VGS) of ±20V, and trench technology (Trench) to reduce on-resistance. The on-resistance (RDS(ON)) of this MOSFET is only 3mΩ at VGS=4.5V, and is as low as 2mΩ at VGS=10V, capable of supporting drain current (ID) of up to 100A. This low on-resistance and high current carrying capability make the MDD2601RH-VB ideal for efficient power management and fast switching applications, especially in systems requiring high power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
MDD2601RH-VB Detailed parameter description
- **Device type**: Single N-channel MOSFET
- **Package**: TO252
- **Technology**: Trench technology
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **ID (continuous drain current)**: 100A
- **Power dissipation**: Depends on heat dissipation design
- **Operating temperature range**: -55°C to 150°C
- **Features**:
- Very low on-resistance, reducing power loss
- High current carrying capacity, supports high current applications
- Excellent switching characteristics, suitable for high frequency operation
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- **Device type**: Single N-channel MOSFET
- **Package**: TO252
- **Technology**: Trench technology
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **ID (continuous drain current)**: 100A
- **Power dissipation**: Depends on heat dissipation design
- **Operating temperature range**: -55°C to 150°C
- **Features**:
- Very low on-resistance, reducing power loss
- High current carrying capacity, supports high current applications
- Excellent switching characteristics, suitable for high frequency operation
---
Domain and module applications：
Applications and module examples
1. **Power tools and industrial equipment**:
The high current carrying capacity and low on-resistance of the MDD2601RH-VB make it ideal for use in power tools and industrial equipment, where it can improve motor drive efficiency and reduce heat generation. For example, in devices that require high power output, such as electric screwdrivers and drills, this MOSFET can achieve longer operating time and higher energy efficiency.
2. **Server and data center power management**:
Data centers and servers often require efficient power conversion modules to manage large-scale loads. The MDD2601RH-VB performs well in this application scenario, reducing energy losses in power conversion, improving system energy efficiency and reducing heat dissipation requirements.
3. **Electric vehicles and battery management systems**:
In electric vehicles and energy storage systems, this MOSFET can be used in battery management modules (BMS) and DC motor drives to help achieve more efficient power transmission and faster charging speeds while maintaining low heat losses.
4. **DC-DC Converters and Regulators**:
This device is well suited for modules such as high-frequency DC-DC converters and linear regulators. In these circuits, the MDD2601RH-VB's efficient switching characteristics and low conduction losses can significantly improve conversion efficiency, especially in portable electronic devices and communications equipment.
5. **High-Efficiency Power Inverters**:
In applications that require power inversion, such as solar systems and UPS (Uninterruptible Power Supply), the MDD2601RH-VB's high current carrying capacity can support the conversion of high-power loads, making it an ideal choice in inverter design.
The MDD2601RH-VB is a high-performance, high-efficiency MOSFET suitable for a variety of modern applications requiring high power density and low losses.
1. **Power tools and industrial equipment**:
The high current carrying capacity and low on-resistance of the MDD2601RH-VB make it ideal for use in power tools and industrial equipment, where it can improve motor drive efficiency and reduce heat generation. For example, in devices that require high power output, such as electric screwdrivers and drills, this MOSFET can achieve longer operating time and higher energy efficiency.
2. **Server and data center power management**:
Data centers and servers often require efficient power conversion modules to manage large-scale loads. The MDD2601RH-VB performs well in this application scenario, reducing energy losses in power conversion, improving system energy efficiency and reducing heat dissipation requirements.
3. **Electric vehicles and battery management systems**:
In electric vehicles and energy storage systems, this MOSFET can be used in battery management modules (BMS) and DC motor drives to help achieve more efficient power transmission and faster charging speeds while maintaining low heat losses.
4. **DC-DC Converters and Regulators**:
This device is well suited for modules such as high-frequency DC-DC converters and linear regulators. In these circuits, the MDD2601RH-VB's efficient switching characteristics and low conduction losses can significantly improve conversion efficiency, especially in portable electronic devices and communications equipment.
5. **High-Efficiency Power Inverters**:
In applications that require power inversion, such as solar systems and UPS (Uninterruptible Power Supply), the MDD2601RH-VB's high current carrying capacity can support the conversion of high-power loads, making it an ideal choice in inverter design.
The MDD2601RH-VB is a high-performance, high-efficiency MOSFET suitable for a variety of modern applications requiring high power density and low losses.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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