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MDD1752RH-VB Product details
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MDD1752RH-VB MOSFET Product Introduction
The MDD1752RH-VB is a high-performance single N-channel MOSFET in a TO252 package with excellent on-resistance and current handling capabilities. The device has a maximum drain-source voltage (VDS) of 40V and supports a gate-source voltage (VGS) range of ±20V, suitable for a wide range of power management and high-efficiency switching applications. Its extremely low on-resistance (6mΩ at VGS of 4.5V and 5mΩ at VGS of 10V) ensures extremely low power consumption and high efficiency, while supporting a maximum drain current (ID) of up to 85A, making it very suitable for high-current applications. The use of advanced Trench technology further improves switching speed and reduces losses.
The MDD1752RH-VB is a high-performance single N-channel MOSFET in a TO252 package with excellent on-resistance and current handling capabilities. The device has a maximum drain-source voltage (VDS) of 40V and supports a gate-source voltage (VGS) range of ±20V, suitable for a wide range of power management and high-efficiency switching applications. Its extremely low on-resistance (6mΩ at VGS of 4.5V and 5mΩ at VGS of 10V) ensures extremely low power consumption and high efficiency, while supporting a maximum drain current (ID) of up to 85A, making it very suitable for high-current applications. The use of advanced Trench technology further improves switching speed and reduces losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Product model**: MDD1752RH-VB
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS=4.5V)
- 5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
- **Product model**: MDD1752RH-VB
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS=4.5V)
- 5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
The MDD1752RH-VB MOSFET is suitable for a variety of high-power and high-efficiency applications. Here are a few typical applications:
1. **Electric Vehicle (EV) Battery Management System**: In the battery management system of electric vehicles, this MOSFET can be used to control the high-current charging and discharging process to ensure efficient and safe operation of the battery.
2. **Power Converter**: In DC-DC power converters, the MDD1752RH-VB can be used as a switching device to efficiently convert energy while maintaining low power consumption.
3. **Industrial Motor Drive**: Due to its high current carrying capacity and low on-resistance, this MOSFET is suitable for industrial motor drive modules to help achieve fast switching and high-efficiency operation.
4. **High-power LED Driver**: The device can provide low heat loss and high current control in LED drive circuits to ensure stable and high-brightness output of LED lamps.
5. **Data Center Power**: In high-power servers and storage devices in data centers, the MDD1752RH-VB can be used to manage the efficient distribution of power and provide stable and efficient power control.
Through its efficient switching speed and low loss characteristics, the MDD1752RH-VB provides reliable performance in multiple application areas and is suitable for a variety of scenarios requiring high current and high efficiency.
The MDD1752RH-VB MOSFET is suitable for a variety of high-power and high-efficiency applications. Here are a few typical applications:
1. **Electric Vehicle (EV) Battery Management System**: In the battery management system of electric vehicles, this MOSFET can be used to control the high-current charging and discharging process to ensure efficient and safe operation of the battery.
2. **Power Converter**: In DC-DC power converters, the MDD1752RH-VB can be used as a switching device to efficiently convert energy while maintaining low power consumption.
3. **Industrial Motor Drive**: Due to its high current carrying capacity and low on-resistance, this MOSFET is suitable for industrial motor drive modules to help achieve fast switching and high-efficiency operation.
4. **High-power LED Driver**: The device can provide low heat loss and high current control in LED drive circuits to ensure stable and high-brightness output of LED lamps.
5. **Data Center Power**: In high-power servers and storage devices in data centers, the MDD1752RH-VB can be used to manage the efficient distribution of power and provide stable and efficient power control.
Through its efficient switching speed and low loss characteristics, the MDD1752RH-VB provides reliable performance in multiple application areas and is suitable for a variety of scenarios requiring high current and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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