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MDD1653-VB Product details
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MDD1653-VB Product Introduction
The MDD1653-VB is a high-efficiency single N-channel MOSFET in a TO252 package, designed for applications requiring high current and low on-resistance. Its maximum drain-source voltage (VDS) is 30V and its gate-source voltage (VGS) is ±20V, ensuring stable operation under a wide range of operating conditions. The device has a threshold voltage (Vth) of 1.7V and can be turned on quickly. The on-resistance of the MDD1653-VB is 6mΩ at a VGS of 4.5V and 5mΩ at a VGS of 10V, ensuring low power consumption and high efficiency. Its maximum drain current (ID) can reach 80A, making it suitable for applications requiring high power density. The design using Trench technology further improves its switching speed and power efficiency.
The MDD1653-VB is a high-efficiency single N-channel MOSFET in a TO252 package, designed for applications requiring high current and low on-resistance. Its maximum drain-source voltage (VDS) is 30V and its gate-source voltage (VGS) is ±20V, ensuring stable operation under a wide range of operating conditions. The device has a threshold voltage (Vth) of 1.7V and can be turned on quickly. The on-resistance of the MDD1653-VB is 6mΩ at a VGS of 4.5V and 5mΩ at a VGS of 10V, ensuring low power consumption and high efficiency. Its maximum drain current (ID) can reach 80A, making it suitable for applications requiring high power density. The design using Trench technology further improves its switching speed and power efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
MDD1653-VB Detailed parameter description
- **Package:** TO252
- **Configuration:** Single-N-Channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID):** 80A
- **Technology:** Trench
- **Package:** TO252
- **Configuration:** Single-N-Channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID):** 80A
- **Technology:** Trench
Domain and module applications：
MDD1653-VB Applications and Modules
1. **Automotive electronics**: MDD1653-VB is suitable for power management and load switching applications in automotive electronics, such as power window control, engine management systems, etc. Its high current carrying capacity and low on-resistance make it excel in these environments that require high reliability and efficiency.
2. **Motor drive**: In motor control and drive systems, this MOSFET can provide efficient current switching capabilities and is suitable for DC motor drives in electric vehicles and industrial automation. Its high current handling capability ensures that the device can operate stably under high loads.
3. **DC-DC converter**: MDD1653-VB is an ideal choice in DC-DC converter circuits, especially for designs with high power density and low loss. It can efficiently convert voltage under different input voltage conditions and is suitable for power management modules for consumer electronics and communication equipment.
4. **Load Switch and Protection Circuit**: This MOSFET is widely used in protection circuits and load switches to cope with transient current or sudden high power demand. Its high switching speed and low RDS(ON) performance ensure fast response and protection under harsh conditions.
By combining low on-resistance and high current carrying capacity, MDD1653-VB has a wide range of application prospects in the field of high power and high efficiency.
1. **Automotive electronics**: MDD1653-VB is suitable for power management and load switching applications in automotive electronics, such as power window control, engine management systems, etc. Its high current carrying capacity and low on-resistance make it excel in these environments that require high reliability and efficiency.
2. **Motor drive**: In motor control and drive systems, this MOSFET can provide efficient current switching capabilities and is suitable for DC motor drives in electric vehicles and industrial automation. Its high current handling capability ensures that the device can operate stably under high loads.
3. **DC-DC converter**: MDD1653-VB is an ideal choice in DC-DC converter circuits, especially for designs with high power density and low loss. It can efficiently convert voltage under different input voltage conditions and is suitable for power management modules for consumer electronics and communication equipment.
4. **Load Switch and Protection Circuit**: This MOSFET is widely used in protection circuits and load switches to cope with transient current or sudden high power demand. Its high switching speed and low RDS(ON) performance ensure fast response and protection under harsh conditions.
By combining low on-resistance and high current carrying capacity, MDD1653-VB has a wide range of application prospects in the field of high power and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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