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MDC0531ET-VB Product details
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MDC0531ET-VB MOSFET Product Introduction
MDC0531ET-VB is an advanced common-source dual N-channel MOSFET in TSSOP8 package, designed for high-efficiency electronic circuits. The device has a high drain-source voltage (VDS) of 30V, suitable for a variety of power management and switching applications. Its gate drive voltage (VGS) reaches ±20V, ensuring stable performance under a wide range of operating conditions. The design of Vth of 1.7V gives it good switching characteristics. At low gate voltage, MDC0531ET-VB can still maintain extremely low on-resistance (RDS(ON)), which are 19mΩ (VGS = 4.5V) and 12mΩ (VGS = 10V), respectively, and the maximum continuous current (ID) reaches 8.6A, which is very suitable for high-efficiency power conversion and drive circuits.
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MDC0531ET-VB is an advanced common-source dual N-channel MOSFET in TSSOP8 package, designed for high-efficiency electronic circuits. The device has a high drain-source voltage (VDS) of 30V, suitable for a variety of power management and switching applications. Its gate drive voltage (VGS) reaches ±20V, ensuring stable performance under a wide range of operating conditions. The design of Vth of 1.7V gives it good switching characteristics. At low gate voltage, MDC0531ET-VB can still maintain extremely low on-resistance (RDS(ON)), which are 19mΩ (VGS = 4.5V) and 12mΩ (VGS = 10V), respectively, and the maximum continuous current (ID) reaches 8.6A, which is very suitable for high-efficiency power conversion and drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
MDC0531ET-VB Detailed parameter description
- **Device type**: Dual N-channel MOSFET (common source configuration)
- **Package**: TSSOP8
- **Technology**: Trench technology (Trench)
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 19mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **ID (continuous drain current)**: 8.6A
- **Power dissipation**: Depends on heat dissipation design
- **Operating temperature range**: -55°C to 150°C
- **Features**:
- Low on-resistance, improved energy efficiency
- Excellent switching characteristics, suitable for fast switching applications
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- **Device type**: Dual N-channel MOSFET (common source configuration)
- **Package**: TSSOP8
- **Technology**: Trench technology (Trench)
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 19mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **ID (continuous drain current)**: 8.6A
- **Power dissipation**: Depends on heat dissipation design
- **Operating temperature range**: -55°C to 150°C
- **Features**:
- Low on-resistance, improved energy efficiency
- Excellent switching characteristics, suitable for fast switching applications
---
Domain and module applications：
Applications and module examples
1. **Power management system**:
MDC0531ET-VB performs well in switch mode power supplies (SMPS) and DC-DC converters. Its low on-resistance can significantly reduce power loss and improve the overall efficiency of the system. With optimized on-state performance, the device can effectively support high load currents.
2. **Battery management and protection circuits**:
In lithium battery management systems, MDC0531ET-VB is used to control the charging and discharging process to ensure that the battery operates in a safe working state. Its high-efficiency design can extend battery life and improve charging efficiency.
3. **Motor control and drive**:
MDC0531ET-VB is suitable for motor drive applications, especially in small motor and stepper motor control. Through high-frequency switching operations, it can effectively improve the efficiency and stability of motor operation.
4. **Load Switch and Signal Switch**:
This MOSFET can be widely used in load switches, allowing users to quickly turn on and off power in the circuit, suitable for computer peripherals, home appliances and other fields. Due to its small package, it is suitable for application designs with limited space.
5. **Consumer Electronics**:
In smartphones, tablets and other portable devices, MDC0531ET-VB can be used for power switch management. Its low power consumption characteristics help achieve longer battery life and improve the overall performance of the device.
In summary, MDC0531ET-VB is a high-performance dual N-channel MOSFET that is suitable for a variety of high-efficiency electronic applications and can meet the needs of modern electronic devices for power management and control.
1. **Power management system**:
MDC0531ET-VB performs well in switch mode power supplies (SMPS) and DC-DC converters. Its low on-resistance can significantly reduce power loss and improve the overall efficiency of the system. With optimized on-state performance, the device can effectively support high load currents.
2. **Battery management and protection circuits**:
In lithium battery management systems, MDC0531ET-VB is used to control the charging and discharging process to ensure that the battery operates in a safe working state. Its high-efficiency design can extend battery life and improve charging efficiency.
3. **Motor control and drive**:
MDC0531ET-VB is suitable for motor drive applications, especially in small motor and stepper motor control. Through high-frequency switching operations, it can effectively improve the efficiency and stability of motor operation.
4. **Load Switch and Signal Switch**:
This MOSFET can be widely used in load switches, allowing users to quickly turn on and off power in the circuit, suitable for computer peripherals, home appliances and other fields. Due to its small package, it is suitable for application designs with limited space.
5. **Consumer Electronics**:
In smartphones, tablets and other portable devices, MDC0531ET-VB can be used for power switch management. Its low power consumption characteristics help achieve longer battery life and improve the overall performance of the device.
In summary, MDC0531ET-VB is a high-performance dual N-channel MOSFET that is suitable for a variety of high-efficiency electronic applications and can meet the needs of modern electronic devices for power management and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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