中文
English
M10N60F-VB Product details
Back to previous pageProduct introduction：
M10N60F-VB MOSFET Product Introduction
The M10N60F-VB is a high-voltage single N-channel MOSFET in a **TO220F package**, designed for high voltage and high power applications. The device has a **drain-source voltage (VDS) of 650V**, which is suitable for operation in high voltage environments and is widely used in power management, switching power supplies and other applications requiring higher voltages. **The gate-source voltage (VGS) range is ±30V**, providing flexible control options, allowing it to be used with a variety of logic level circuits. The M10N60F-VB has a **threshold voltage (Vth) of 3.5V**, which can be turned on at a moderate gate drive voltage, making it easy to integrate into various control systems. Its **on-resistance (RDS(ON)) is 830mΩ@VGS=10V**. Although it is relatively high, it can still ensure good conduction performance in 650V applications, and the **maximum drain current (ID) is 10A**, which is suitable for medium power loads. The **Planar** technology used in this MOSFET ensures its stability and reliability, making it suitable for various power electronics applications.
The M10N60F-VB is a high-voltage single N-channel MOSFET in a **TO220F package**, designed for high voltage and high power applications. The device has a **drain-source voltage (VDS) of 650V**, which is suitable for operation in high voltage environments and is widely used in power management, switching power supplies and other applications requiring higher voltages. **The gate-source voltage (VGS) range is ±30V**, providing flexible control options, allowing it to be used with a variety of logic level circuits. The M10N60F-VB has a **threshold voltage (Vth) of 3.5V**, which can be turned on at a moderate gate drive voltage, making it easy to integrate into various control systems. Its **on-resistance (RDS(ON)) is 830mΩ@VGS=10V**. Although it is relatively high, it can still ensure good conduction performance in 650V applications, and the **maximum drain current (ID) is 10A**, which is suitable for medium power loads. The **Planar** technology used in this MOSFET ensures its stability and reliability, making it suitable for various power electronics applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
M10N60F-VB Detailed parameter description
- **Device type**: Single N-channel MOSFET
- **Package**: TO220F
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Planar technology
- **Maximum power dissipation**: Depends on the specific application (refer to the manufacturer's data sheet)
- **Operating temperature range**: Common range can reach 175°C
- **Reverse recovery time (trr)**: Short, suitable for high-frequency switching applications
- **Gate charge (Qg)**: Moderate, optimize switching performance and efficiency
- **Device type**: Single N-channel MOSFET
- **Package**: TO220F
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Planar technology
- **Maximum power dissipation**: Depends on the specific application (refer to the manufacturer's data sheet)
- **Operating temperature range**: Common range can reach 175°C
- **Reverse recovery time (trr)**: Short, suitable for high-frequency switching applications
- **Gate charge (Qg)**: Moderate, optimize switching performance and efficiency
Domain and module applications：
M10N60F-VB Applicable fields and modules
M10N60F-VB MOSFET is suitable for multiple fields due to its high voltage and high power performance, especially in the following application scenarios:
1. **Switching power supply**: M10N60F-VB is widely used in **Switching mode power supply (SMPS)**. Its high withstand voltage capability of 650V enables it to handle large input voltages and is suitable for various power conversion applications.
2. **Inverter**: This MOSFET is suitable for **Inverter** circuits, especially in solar inverters and electric vehicle drive systems, and can operate stably under high voltage environments to meet high power requirements.
3. **Power electronics**: In **power electronic equipment**, such as power modules and power management circuits, M10N60F-VB can effectively control current and voltage, improving the efficiency and reliability of the overall system.
4. **Industrial control**: In **industrial automation** and **motor control** systems, this MOSFET can be used for load switching, switch control and other functions. Its high voltage and medium current capabilities ensure reliable working performance.
M10N60F-VB is an excellent performance MOSFET, which is widely used in high voltage and medium current power management and control systems. Its excellent characteristics and stability make it have broad application prospects in various applications.
M10N60F-VB MOSFET is suitable for multiple fields due to its high voltage and high power performance, especially in the following application scenarios:
1. **Switching power supply**: M10N60F-VB is widely used in **Switching mode power supply (SMPS)**. Its high withstand voltage capability of 650V enables it to handle large input voltages and is suitable for various power conversion applications.
2. **Inverter**: This MOSFET is suitable for **Inverter** circuits, especially in solar inverters and electric vehicle drive systems, and can operate stably under high voltage environments to meet high power requirements.
3. **Power electronics**: In **power electronic equipment**, such as power modules and power management circuits, M10N60F-VB can effectively control current and voltage, improving the efficiency and reliability of the overall system.
4. **Industrial control**: In **industrial automation** and **motor control** systems, this MOSFET can be used for load switching, switch control and other functions. Its high voltage and medium current capabilities ensure reliable working performance.
M10N60F-VB is an excellent performance MOSFET, which is widely used in high voltage and medium current power management and control systems. Its excellent characteristics and stability make it have broad application prospects in various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
