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LZ44NS-VB Product details
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LZ44NS-VB MOSFET Product Introduction
LZ44NS-VB is a high-efficiency N-channel power MOSFET in TO263 package, designed for high current and high efficiency applications. Based on advanced Trench technology, the device has a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 75A, providing low on-resistance (RDS(ON)), making it excellent in power management and switching applications. LZ44NS-VB is designed to improve power conversion efficiency and reduce heat loss, suitable for various power-intensive applications.
LZ44NS-VB is a high-efficiency N-channel power MOSFET in TO263 package, designed for high current and high efficiency applications. Based on advanced Trench technology, the device has a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 75A, providing low on-resistance (RDS(ON)), making it excellent in power management and switching applications. LZ44NS-VB is designed to improve power conversion efficiency and reduce heat loss, suitable for various power-intensive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Package dimensions**: TO263 package, providing good heat dissipation performance and mechanical strength.
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Package dimensions**: TO263 package, providing good heat dissipation performance and mechanical strength.
Domain and module applications：
Applicable fields and module examples
1. **Power management system**: LZ44NS-VB is very suitable for high-efficiency switching power supplies and DC-DC converters. With its low on-resistance and high current handling capability, this MOSFET can reduce power loss and improve power conversion efficiency. It is suitable for power management modules of data center power supplies and consumer electronics.
2. **Electric vehicle (EV) applications**: In the battery management and motor drive systems of electric vehicles, LZ44NS-VB can provide stable current control to meet the needs of electric vehicles under high load conditions. This makes it an ideal choice for electric vehicle power systems.
3. **Industrial automation**: This MOSFET can be used in industrial control systems and motor drive applications, especially in environments that require high power and high reliability, such as automation equipment and robots. The high current carrying capacity of LZ44NS-VB ensures stability and reliability under heavy load conditions.
4. **Consumer Electronics**: LZ44NS-VB is suitable for high-power consumer electronic devices such as game consoles and audio systems, ensuring power stability under high power conditions. Its low on-resistance allows the device to run cooler, thereby increasing the device's lifespan and efficiency.
In summary, LZ44NS-VB MOSFET is an ideal choice for power management, electric vehicles, industrial control and other fields with its excellent performance and diverse applications, and is a reliable solution to meet modern power needs.
1. **Power management system**: LZ44NS-VB is very suitable for high-efficiency switching power supplies and DC-DC converters. With its low on-resistance and high current handling capability, this MOSFET can reduce power loss and improve power conversion efficiency. It is suitable for power management modules of data center power supplies and consumer electronics.
2. **Electric vehicle (EV) applications**: In the battery management and motor drive systems of electric vehicles, LZ44NS-VB can provide stable current control to meet the needs of electric vehicles under high load conditions. This makes it an ideal choice for electric vehicle power systems.
3. **Industrial automation**: This MOSFET can be used in industrial control systems and motor drive applications, especially in environments that require high power and high reliability, such as automation equipment and robots. The high current carrying capacity of LZ44NS-VB ensures stability and reliability under heavy load conditions.
4. **Consumer Electronics**: LZ44NS-VB is suitable for high-power consumer electronic devices such as game consoles and audio systems, ensuring power stability under high power conditions. Its low on-resistance allows the device to run cooler, thereby increasing the device's lifespan and efficiency.
In summary, LZ44NS-VB MOSFET is an ideal choice for power management, electric vehicles, industrial control and other fields with its excellent performance and diverse applications, and is a reliable solution to meet modern power needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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