Product introduction:
LZ24N-VB MOSFET Product Introduction
LZ24N-VB is a high-performance single N-channel MOSFET in a **TO220 package**, designed for medium voltage and high current applications. The device has a **drain-source voltage (VDS) of 60V**, which can operate in a higher voltage environment and provide a reliable power management solution. **The gate-source voltage (VGS) is ±20V**, which is compatible with a variety of drive circuits and easy to integrate. Its **threshold voltage (Vth) is 1.7V**, which enables it to start with a lower gate drive voltage, which is convenient for logic level control. The **on-resistance (RDS(ON)) of LZ24N-VB is 28mΩ@VGS=4.5V and 24mΩ@VGS=10V**, which has low loss characteristics when turned on, and can effectively improve circuit efficiency. **The maximum drain current (ID) is 50A**, which supports high current load applications. The **trench technology** also ensures that it has efficient switching performance and is suitable for high-speed power conversion occasions.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
50A |
|
|
24mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
50A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
50A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
LZ24N-VB Detailed parameter description
- **Device type**: Single N-channel MOSFET
- **Package**: TO220
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 28mΩ @ VGS=4.5V, 24mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench technology
- **Maximum power consumption**: Usually depends on the specific application scenario (refer to the manufacturer's data sheet)
- **Operating temperature range**: Common operating temperature can reach 175°C
- **Reverse recovery time (trr)**: Suitable for high-frequency applications
- **Gate charge (Qg)**: Moderate, optimized switching performance and efficiency
Domain and module applications:
LZ24N-VB Application Fields and Modules
LZ24N-VB MOSFET has excellent performance in many application fields, especially suitable for the following scenarios:
1. **Power Management System**: LZ24N-VB is particularly suitable for **DC-DC converters**, **Switch Mode Power Supplies (SMPS)** and **Battery Management Systems**. In these applications, the low on-resistance of MOSFET can reduce energy loss and improve power conversion efficiency.
2. **Motor Control**: This MOSFET can be used in **DC motor drive circuits**, especially small and medium power motor application scenarios such as electric vehicles and power tools. Its high current carrying capacity (50A) makes it very suitable for applications requiring high load capacity.
3. **Automotive Electronics**: LZ24N-VB is also commonly used in **automotive electronic systems**, such as **power distribution units** and **on-board electronic control modules**. Its high current and high voltage resistance ensure reliable performance in harsh environments.
4. **Industrial control systems**: In **industrial automation equipment** and **robot control systems**, this MOSFET can help achieve load switching and control, and its efficient switching characteristics and low conduction losses also improve the overall efficiency of the system.
LZ24N-VB is an excellent performance MOSFET, suitable for medium voltage and high current power management and control systems. With its low on-resistance and high efficiency, it has broad application prospects in many fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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