LWI620A-VB Product details
Product introduction:
The LWI620A-VB is a high-performance single N-channel MOSFET designed in a TO263 package, optimized for high voltage and high power applications. With a **drain-source voltage (VDS) of up to 200V**, the device is suitable for a variety of high voltage applications and can operate stably under harsh electrical conditions. **The gate-source voltage (VGS) rating is ±20V**, ensuring its wide compatibility in different circuit configurations. The **threshold voltage (Vth) of this MOSFET is 3V**, suitable for use with logic level signals for easy driving and control. Its **on-resistance (RDS(ON)) is 300mΩ@VGS=10V**, which effectively reduces energy loss in the on state, while the **maximum drain current (ID) is 10A**, making it very suitable for medium power applications. The design using **trench technology** ensures the high efficiency performance of this MOSFET in high-speed switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Device type**: Single N-channel MOSFET
- **Package**: TO263
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Trench technology
- **Configuration**: Single N-channel
- **Maximum operating temperature**: Typically 175°C (depends on manufacturer specifications)
- **Gate charge (Qg)**: Moderate, suitable for a variety of switching applications
- **Reverse recovery time (trr)**: Short, suitable for high-frequency applications
Domain and module applications:
LWI620A-VB MOSFET is widely used in many fields due to its excellent characteristics, especially in situations where high voltage and high efficiency are required:
1. **Power management system**: This MOSFET is very suitable for **switch mode power supply (SMPS)**, **DC-DC converter** and other power management applications. Its high voltage capability and low on-resistance help improve energy conversion efficiency and reduce system losses.
2. **Motor drive**: LWI620A-VB can be used in **motor control circuits**, especially when high-voltage DC motors and stepper motors need to be controlled. Its high current carrying capacity can meet the driving requirements of these motors and ensure stable operation.
3. **Industrial automation**: In industrial automation systems, this MOSFET can be used for **load switching**, **relay drive** and other automation equipment to meet the needs of high voltage and high current in various industrial environments.
4. **Consumer electronics**: LWI620A-VB is also suitable for **consumer electronics**, such as **portable power devices** and **smart home controllers**, where high-voltage power supplies can be effectively controlled and energy efficiency can be improved.
The design of LWI620A-VB makes it excel in many high-voltage applications, and its excellent performance and reliability make it an ideal choice for power management and control systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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