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LWI620A-VB Product details

Product introduction:

LWI620A-VB MOSFET Product Introduction

The LWI620A-VB is a high-performance single N-channel MOSFET designed in a TO263 package, optimized for high voltage and high power applications. With a **drain-source voltage (VDS) of up to 200V**, the device is suitable for a variety of high voltage applications and can operate stably under harsh electrical conditions. **The gate-source voltage (VGS) rating is ±20V**, ensuring its wide compatibility in different circuit configurations. The **threshold voltage (Vth) of this MOSFET is 3V**, suitable for use with logic level signals for easy driving and control. Its **on-resistance (RDS(ON)) is 300mΩ@VGS=10V**, which effectively reduces energy loss in the on state, while the **maximum drain current (ID) is 10A**, making it very suitable for medium power applications. The design using **trench technology** ensures the high efficiency performance of this MOSFET in high-speed switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 200V 3V 10A 300mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 200V 3V 10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 200V 3V 10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
LWI620A-VB Detailed parameter description

- **Device type**: Single N-channel MOSFET
- **Package**: TO263
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Trench technology
- **Configuration**: Single N-channel
- **Maximum operating temperature**: Typically 175°C (depends on manufacturer specifications)
- **Gate charge (Qg)**: Moderate, suitable for a variety of switching applications
- **Reverse recovery time (trr)**: Short, suitable for high-frequency applications

Domain and module applications:

LWI620A-VB Applicable fields and modules

LWI620A-VB MOSFET is widely used in many fields due to its excellent characteristics, especially in situations where high voltage and high efficiency are required:

1. **Power management system**: This MOSFET is very suitable for **switch mode power supply (SMPS)**, **DC-DC converter** and other power management applications. Its high voltage capability and low on-resistance help improve energy conversion efficiency and reduce system losses.

2. **Motor drive**: LWI620A-VB can be used in **motor control circuits**, especially when high-voltage DC motors and stepper motors need to be controlled. Its high current carrying capacity can meet the driving requirements of these motors and ensure stable operation.

3. **Industrial automation**: In industrial automation systems, this MOSFET can be used for **load switching**, **relay drive** and other automation equipment to meet the needs of high voltage and high current in various industrial environments.

4. **Consumer electronics**: LWI620A-VB is also suitable for **consumer electronics**, such as **portable power devices** and **smart home controllers**, where high-voltage power supplies can be effectively controlled and energy efficiency can be improved.

The design of LWI620A-VB makes it excel in many high-voltage applications, and its excellent performance and reliability make it an ideal choice for power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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