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LW610ATM-VB Product details

Product introduction:

LW610ATM-VB MOSFET Product Introduction

LW610ATM-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high power applications. Its **drain-source voltage (VDS) reaches 200V**, which makes it perform well when working in high voltage environments and can meet various harsh electrical conditions. The **gate-source voltage (VGS) rating of this device is ±20V**, ensuring its good compatibility in a variety of circuit configurations. **The threshold voltage (Vth) is 3V**, which makes the LW610ATM-VB compatible with logic level signals for easy control and driving. The **on-resistance (RDS(ON)) of this MOSFET is 300mΩ@VGS=10V**, which can effectively reduce energy loss in the on state, and the **maximum leakage current (ID) is 10A**, making it suitable for most medium power applications. The **slot technology** it adopts ensures efficient switching performance and is suitable for high-speed switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 200V 3V 10A 300mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 200V 3V 10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 200V 3V 10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
LW610ATM-VB Detailed parameter description

- **Device type**: Single N-channel MOSFET
- **Package**: TO263
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Trench technology
- **Configuration**: Single N-channel
- **Maximum operating temperature**: Typically 175°C (depends on manufacturer specifications)
- **Gate charge (Qg)**: Moderate, suitable for a variety of switching applications
- **Reverse recovery time (trr)**: Short, suitable for high-frequency applications

Domain and module applications:

LW610ATM-VB Applicable Fields and Modules

LW610ATM-VB MOSFET is widely used in many fields due to its characteristics, especially in situations where high voltage and high efficiency are required:

1. **Power Management System**: This MOSFET is very suitable for **Switch Mode Power Supply (SMPS)** and **DC-DC Converter** because it can work effectively at high voltage, and its low on-resistance can reduce energy loss and improve system efficiency.

2. **Motor Drive**: LW610ATM-VB can be used in **Motor Control Circuits**, especially in situations where high voltage DC motors and stepper motors need to be controlled, and its high voltage and current capabilities can meet the drive requirements.

3. **Industrial Automation**: In industrial automation systems, this MOSFET can be used for **load switches** and **relay drives**, and its high voltage characteristics ensure stable operation in various industrial environments.

4. **Consumer electronics**: LW610ATM-VB is also suitable for **portable electronic devices** and **smart home products**, where it can effectively control high-voltage power supplies and improve energy efficiency.

The design of LW610ATM-VB makes it excel in many high-voltage applications, and its excellent performance and reliability make it an ideal choice for power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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