LW610ATM-VB Product details
Product introduction:
LW610ATM-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high power applications. Its **drain-source voltage (VDS) reaches 200V**, which makes it perform well when working in high voltage environments and can meet various harsh electrical conditions. The **gate-source voltage (VGS) rating of this device is ±20V**, ensuring its good compatibility in a variety of circuit configurations. **The threshold voltage (Vth) is 3V**, which makes the LW610ATM-VB compatible with logic level signals for easy control and driving. The **on-resistance (RDS(ON)) of this MOSFET is 300mΩ@VGS=10V**, which can effectively reduce energy loss in the on state, and the **maximum leakage current (ID) is 10A**, making it suitable for most medium power applications. The **slot technology** it adopts ensures efficient switching performance and is suitable for high-speed switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Device type**: Single N-channel MOSFET
- **Package**: TO263
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Trench technology
- **Configuration**: Single N-channel
- **Maximum operating temperature**: Typically 175°C (depends on manufacturer specifications)
- **Gate charge (Qg)**: Moderate, suitable for a variety of switching applications
- **Reverse recovery time (trr)**: Short, suitable for high-frequency applications
Domain and module applications:
LW610ATM-VB MOSFET is widely used in many fields due to its characteristics, especially in situations where high voltage and high efficiency are required:
1. **Power Management System**: This MOSFET is very suitable for **Switch Mode Power Supply (SMPS)** and **DC-DC Converter** because it can work effectively at high voltage, and its low on-resistance can reduce energy loss and improve system efficiency.
2. **Motor Drive**: LW610ATM-VB can be used in **Motor Control Circuits**, especially in situations where high voltage DC motors and stepper motors need to be controlled, and its high voltage and current capabilities can meet the drive requirements.
3. **Industrial Automation**: In industrial automation systems, this MOSFET can be used for **load switches** and **relay drives**, and its high voltage characteristics ensure stable operation in various industrial environments.
4. **Consumer electronics**: LW610ATM-VB is also suitable for **portable electronic devices** and **smart home products**, where it can effectively control high-voltage power supplies and improve energy efficiency.
The design of LW610ATM-VB makes it excel in many high-voltage applications, and its excellent performance and reliability make it an ideal choice for power management and control systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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