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LW1520A-VB Product details
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LW1520A-VB MOSFET Product Introduction:
LW1520A-VB is a high-performance single N-channel MOSFET designed with advanced trench technology, featuring excellent switching performance and low on-resistance characteristics. The device has a maximum drain-source voltage (VDS) of 100V and can support a continuous drain current (ID) of up to 20A. Its gate threshold voltage (Vth) is 1.8V, ensuring efficient switching under different operating conditions. When a gate-source voltage (VGS) of 10V is applied, its on-resistance (RDS(ON)) is 100mΩ. LW1520A-VB uses a TO263 package, which is suitable for high-efficiency power management and drive applications.
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LW1520A-VB is a high-performance single N-channel MOSFET designed with advanced trench technology, featuring excellent switching performance and low on-resistance characteristics. The device has a maximum drain-source voltage (VDS) of 100V and can support a continuous drain current (ID) of up to 20A. Its gate threshold voltage (Vth) is 1.8V, ensuring efficient switching under different operating conditions. When a gate-source voltage (VGS) of 10V is applied, its on-resistance (RDS(ON)) is 100mΩ. LW1520A-VB uses a TO263 package, which is suitable for high-efficiency power management and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description of LW1520A-VB:
- **Device type**: Single N-channel MOSFET
- **Package**: TO263
- **Technology**: Trench technology (Trench)
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.8V
- **RDS(ON) (on-resistance)**: 100mΩ @ VGS = 10V
- **ID (continuous drain current)**: 20A
- **Maximum power consumption**: Depends on heat dissipation conditions (see thermal design details in the data sheet for details)
- **Operating temperature range**: -55°C to 175°C
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- **Device type**: Single N-channel MOSFET
- **Package**: TO263
- **Technology**: Trench technology (Trench)
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.8V
- **RDS(ON) (on-resistance)**: 100mΩ @ VGS = 10V
- **ID (continuous drain current)**: 20A
- **Maximum power consumption**: Depends on heat dissipation conditions (see thermal design details in the data sheet for details)
- **Operating temperature range**: -55°C to 175°C
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Domain and module applications：
- In power converters and inverters, the LU7843C-VB can effectively improve energy conversion efficiency and reduce heat generation due to its low RDS(ON) and high current handling capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
