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LSH70R570GT-VB Product details
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Product Introduction
**LSH70R570GT-VB** is a high-performance single N-channel MOSFET in TO251 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) can be as high as 700V, the gate-source voltage (VGS) reaches ±30V, and the threshold voltage (Vth) is 3.5V. This device has a low on-resistance (RDS(ON)), which is 600mΩ at VGS=10V, and the maximum continuous current (ID) can reach 10A. Based on SJ_Multi-EPI technology, LSH70R570GT-VB has excellent switching performance and thermal stability. It is suitable for demanding power management and switching applications, and can effectively improve the overall system efficiency and reliability.
**LSH70R570GT-VB** is a high-performance single N-channel MOSFET in TO251 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) can be as high as 700V, the gate-source voltage (VGS) reaches ±30V, and the threshold voltage (Vth) is 3.5V. This device has a low on-resistance (RDS(ON)), which is 600mΩ at VGS=10V, and the maximum continuous current (ID) can reach 10A. Based on SJ_Multi-EPI technology, LSH70R570GT-VB has excellent switching performance and thermal stability. It is suitable for demanding power management and switching applications, and can effectively improve the overall system efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 10A | 600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
| Parameters| Specifications|
|--------------------------|--------------------|
| **Model** | LSH70R570GT-VB |
| **Package type** | TO251 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 700V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 600mΩ (@VGS=10V) |
| **Maximum continuous current (ID)** | 10A |
| **Technology** | SJ_Multi-EPI |
| Parameters| Specifications|
|--------------------------|--------------------|
| **Model** | LSH70R570GT-VB |
| **Package type** | TO251 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 700V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 600mΩ (@VGS=10V) |
| **Maximum continuous current (ID)** | 10A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications：
Application fields and module examples
**1. Power Converters: **
- **Application examples**: LSH70R570GT-VB can be used as the main switching element in the switching power converter, providing efficient power conversion and optimized energy management to ensure the stability of the system under high load conditions.
- **Module type**: AC-DC converter, DC-DC step-up/step-down module.
**2. Electronic drive equipment: **
- **Application examples**: In the motor drive system, LSH70R570GT-VB can be used to control the drive of DC or AC motors, improve its efficiency and reduce energy loss.
- **Module type**: Motor controller, servo drive.
**3. Lighting control: **
- **Application examples**: This MOSFET can be used in LED lighting drive circuits to achieve efficient current control and lighting effects, and improve the reliability and life of the system.
- **Module Type**: LED driver power supply, intelligent lighting control system.
**4. Renewable energy system: **
- **Application example**: In photovoltaic inverters, LSH70R570GT-VB can be used to achieve efficient DC/AC conversion, convert solar energy into usable electrical energy, and support the use of renewable energy.
- **Module Type**: Photovoltaic inverter, energy storage system management.
Through the above application examples, LSH70R570GT-VB shows its advantages in high-voltage, high-efficiency application environments and is an indispensable component of modern power solutions.
**1. Power Converters: **
- **Application examples**: LSH70R570GT-VB can be used as the main switching element in the switching power converter, providing efficient power conversion and optimized energy management to ensure the stability of the system under high load conditions.
- **Module type**: AC-DC converter, DC-DC step-up/step-down module.
**2. Electronic drive equipment: **
- **Application examples**: In the motor drive system, LSH70R570GT-VB can be used to control the drive of DC or AC motors, improve its efficiency and reduce energy loss.
- **Module type**: Motor controller, servo drive.
**3. Lighting control: **
- **Application examples**: This MOSFET can be used in LED lighting drive circuits to achieve efficient current control and lighting effects, and improve the reliability and life of the system.
- **Module Type**: LED driver power supply, intelligent lighting control system.
**4. Renewable energy system: **
- **Application example**: In photovoltaic inverters, LSH70R570GT-VB can be used to achieve efficient DC/AC conversion, convert solar energy into usable electrical energy, and support the use of renewable energy.
- **Module Type**: Photovoltaic inverter, energy storage system management.
Through the above application examples, LSH70R570GT-VB shows its advantages in high-voltage, high-efficiency application environments and is an indispensable component of modern power solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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