LSH70R1KGT-VB Product details
Product introduction:
**LSH70R1KGT-VB** is a high-performance N-Channel MOSFET in TO251 package, designed for high voltage and high power applications. The device has a drain-source voltage (VDS) of 700V, enabling it to operate stably in various high-voltage circuits. The gate-source voltage (VGS) range is ±30V and the threshold voltage (Vth) is 3.5V, ensuring excellent switching characteristics under different operating conditions. At VGS=10V, the on-resistance (RDS(ON)) is 1000mΩ and the maximum leakage current (ID) is 5A. This MOSFET uses SJ_Multi-EPI technology, has low conduction losses and good thermal performance, and is suitable for power conversion and switching applications that require high efficiency and reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| Parameter| Description|
|-------------------|----------------------------------------|
| **Model** | LSH70R1KGT-VB |
| **Package** | TO251 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 700V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 1000mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 5A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications:
1. **Switching power supply**:
LSH70R1KGT-VB is suitable for high-voltage switching power supplies (such as AC-DC converters and DC-DC converters). Its high drain-source voltage and low on-resistance help improve the conversion efficiency of the power supply and reduce energy loss.
2. **LED drive circuit**:
This MOSFET can be used in high-power LED drive circuits to provide stable current control. It is suitable for large-scale LED lighting systems to ensure efficient operation and extend service life.
3. **Motor control**:
In motor drive applications, LSH70R1KGT-VB can effectively control the start-up and operation of the motor. It is especially suitable for inverter and servo motor drive systems to improve the overall performance of the system.
4. **Industrial automation equipment**:
This device performs well in industrial automation and control systems. It is suitable for high-voltage power modules, supports the reliable operation of various high-power industrial equipment, and ensures the stability of the equipment under high load conditions.
5. **Renewable Energy Systems**:
LSH70R1KGT-VB can be used for high-voltage DC-DC conversion in solar inverters and wind power generation systems, helping to improve energy conversion efficiency and achieve effective use of renewable energy.
Through these application examples, we can see the wide applicability of LSH70R1KGT-VB in high-voltage and high-power fields, especially for power electronic equipment with strict requirements for high efficiency and high reliability.
Technical support:
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