LSH65R930GT-VB Product details
Product introduction:
LSH65R930GT-VB is a high-voltage N-channel MOSFET in TO251 package, designed for high-voltage applications, with excellent switching characteristics and thermal performance. Its maximum drain-source voltage (VDS) can reach 650V, which can meet the needs of a variety of high-voltage power supplies and conversion systems. The device has a gate-source voltage (VGS) of ±30V and a threshold voltage (Vth) of 3.5V, ensuring effective conduction under appropriate gate drive conditions. The on-resistance (RDS(ON)) of LSH65R930GT-VB is 950mΩ@VGS=10V, which is relatively high, but it still maintains good conductivity under high-voltage conditions of 650V. The maximum continuous current (ID) is 5A, which is suitable for medium-power high-voltage power supplies and drive circuits. Using SJ_Multi-EPI technology, LSH65R930GT-VB has good heat dissipation performance and reliability, can work stably under high temperature and high load environments, and is an ideal choice in the field of power electronics and power management.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| **Parameter** | **Description** |
|----------------------|--------------------------|
| **Model** | LSH65R930GT-VB |
| **Package** | TO251 |
| **Configuration** | Single N-channel|
| **Drain-Source Voltage (VDS)** | 650V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 950mΩ @ VGS=10V |
| **Maximum Continuous Current (ID)** | 5A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications:
LSH65R930GT-VB has a wide range of applications, including the following fields and modules:
1. **High-voltage power management**: LSH65R930GT-VB can be used in switching power supplies (SMPS) and power adapters. It can withstand input voltages up to 650V and is suitable for power conversion in various industrial and consumer electronic devices.
2. **Power tools and home appliances**: In power tools and home appliances, this MOSFET can be used as an efficient switching element, suitable for driving and controlling motors, ensuring the reliability and stability of the equipment.
3. **Solar inverter**: LSH65R930GT-VB is very suitable for use in solar inverters, which can efficiently convert DC power generated by solar cells into AC power, providing renewable energy solutions for homes and businesses.
4. **Industrial Automation Equipment**: In automation control systems, this MOSFET can be used for motor drive and power management to achieve high efficiency and precise control, suitable for robots and manufacturing equipment.
5. **Battery Management System**: LSH65R930GT-VB can be used in battery management modules for lithium battery charge and discharge control to ensure battery safety and efficiency, suitable for electric vehicles and energy storage systems.
In summary, LSH65R930GT-VB is an excellent high-voltage MOSFET suitable for a variety of high-voltage applications, meeting the needs of modern electronic equipment for high efficiency and reliability.
Technical support:
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