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LSH65R570GT-VB Product details
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1. LSH65R570GT-VB Product Introduction
LSH65R570GT-VB is a high-performance single N-channel MOSFET with a TO251 package type. Its design is optimized for high-voltage applications, with a drain-source voltage (VDS) of up to 650V and a maximum drain current (ID) of 9A. This MOSFET uses SJ_Multi-EPI (super junction multi-epitaxial) technology to provide low on-resistance (RDS(ON) of 500mΩ at a gate-source voltage of 10V), effectively reducing power losses and improving overall system efficiency in high-current applications. LSH65R570GT-VB is suitable for a variety of high-power and high-voltage applications, providing reliable current switching capabilities and ensuring stability in various harsh working environments.
LSH65R570GT-VB is a high-performance single N-channel MOSFET with a TO251 package type. Its design is optimized for high-voltage applications, with a drain-source voltage (VDS) of up to 650V and a maximum drain current (ID) of 9A. This MOSFET uses SJ_Multi-EPI (super junction multi-epitaxial) technology to provide low on-resistance (RDS(ON) of 500mΩ at a gate-source voltage of 10V), effectively reducing power losses and improving overall system efficiency in high-current applications. LSH65R570GT-VB is suitable for a variety of high-power and high-voltage applications, providing reliable current switching capabilities and ensuring stability in various harsh working environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. LSH65R570GT-VB Detailed parameter description
1. **Package type**: TO251
- The TO251 package design is compact, convenient for application in space-constrained circuits, while providing good heat dissipation performance.
2. **Channel type**: Single-N-Channel
- The single-N-channel design has efficient current control and switching performance, suitable for high voltage and high power applications.
3. **Drain-source voltage (VDS)**: 650V
- The drain-source voltage capability of up to 650V makes it suitable for use in high voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a flexible gate drive voltage range to meet the needs of a variety of control circuits.
5. **Threshold voltage (Vth)**: 3.5V
- The moderate threshold voltage enables the device to respond quickly when turned on, improving switching efficiency.
6. **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- The lower on-resistance effectively reduces power loss when large current is transmitted, thereby improving the overall efficiency of the system.
7. **Drain current (ID)**: 9A
- The maximum drain current is 9A, suitable for medium and high power applications.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- This technology improves the conductivity and heat dissipation performance of the MOSFET, ensuring its stable operation under high frequency and high power conditions.
1. **Package type**: TO251
- The TO251 package design is compact, convenient for application in space-constrained circuits, while providing good heat dissipation performance.
2. **Channel type**: Single-N-Channel
- The single-N-channel design has efficient current control and switching performance, suitable for high voltage and high power applications.
3. **Drain-source voltage (VDS)**: 650V
- The drain-source voltage capability of up to 650V makes it suitable for use in high voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a flexible gate drive voltage range to meet the needs of a variety of control circuits.
5. **Threshold voltage (Vth)**: 3.5V
- The moderate threshold voltage enables the device to respond quickly when turned on, improving switching efficiency.
6. **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- The lower on-resistance effectively reduces power loss when large current is transmitted, thereby improving the overall efficiency of the system.
7. **Drain current (ID)**: 9A
- The maximum drain current is 9A, suitable for medium and high power applications.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- This technology improves the conductivity and heat dissipation performance of the MOSFET, ensuring its stable operation under high frequency and high power conditions.
Domain and module applications：
III. Application fields and module examples
1. **Industrial power management**
In industrial power management systems, LSH65R570GT-VB can be used for efficient current control and switching to achieve efficient power conversion, reduce energy consumption, and ensure stable power supply.
2. **Photovoltaic inverter**
This MOSFET is used in photovoltaic inverters to convert DC power generated by solar panels into AC power. With its 650V high voltage capability, LSH65R570GT-VB can effectively handle the high voltage requirements of photovoltaic systems and improve energy efficiency.
3. **Electric vehicle drive system**
In the drive system of electric vehicles, LSH65R570GT-VB is used to control the current of the motor, provide reliable high-voltage switching, and ensure the safe operation of electric vehicles under high load conditions.
4. **Switching Power Supply (SMPS)**
This device acts as an efficient switching element in the switching power supply. It reduces on-resistance and power loss, improves power conversion efficiency, and is suitable for use in AC/DC and DC/DC converters.
5. **LED Driver**
LSH65R570GT-VB can be used as a driver in LED lighting systems to provide stable current control, ensuring that LED lamps operate under high efficiency and long life conditions, and is suitable for various lighting applications.
6. **Uninterruptible Power Supply (UPS)**
In the UPS system, LSH65R570GT-VB acts as an efficient switching element to ensure fast response and stability of power switching, providing reliable power protection for equipment, especially in the event of power outages.
1. **Industrial power management**
In industrial power management systems, LSH65R570GT-VB can be used for efficient current control and switching to achieve efficient power conversion, reduce energy consumption, and ensure stable power supply.
2. **Photovoltaic inverter**
This MOSFET is used in photovoltaic inverters to convert DC power generated by solar panels into AC power. With its 650V high voltage capability, LSH65R570GT-VB can effectively handle the high voltage requirements of photovoltaic systems and improve energy efficiency.
3. **Electric vehicle drive system**
In the drive system of electric vehicles, LSH65R570GT-VB is used to control the current of the motor, provide reliable high-voltage switching, and ensure the safe operation of electric vehicles under high load conditions.
4. **Switching Power Supply (SMPS)**
This device acts as an efficient switching element in the switching power supply. It reduces on-resistance and power loss, improves power conversion efficiency, and is suitable for use in AC/DC and DC/DC converters.
5. **LED Driver**
LSH65R570GT-VB can be used as a driver in LED lighting systems to provide stable current control, ensuring that LED lamps operate under high efficiency and long life conditions, and is suitable for various lighting applications.
6. **Uninterruptible Power Supply (UPS)**
In the UPS system, LSH65R570GT-VB acts as an efficient switching element to ensure fast response and stability of power switching, providing reliable power protection for equipment, especially in the event of power outages.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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