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LSH60R380E-VB Product details
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LSH60R380E-VB Product Introduction
LSH60R380E-VB is a high-performance N-channel MOSFET in TO251 package, suitable for applications requiring high voltage and high efficiency. The device has a maximum drain-source voltage (VDS) of 600V and a drain current (ID) of 11A, suitable for stable operation in high-voltage environments. The gate-source voltage (VGS) is rated at ±30V and the threshold voltage (Vth) is 3.5V, ensuring good conduction characteristics. Its on-resistance (RDS(ON)) is 380mΩ at a gate voltage of 10V, with excellent conductivity and low power consumption. It uses SJ_Multi-EPI technology to provide higher performance and reliability.
LSH60R380E-VB is a high-performance N-channel MOSFET in TO251 package, suitable for applications requiring high voltage and high efficiency. The device has a maximum drain-source voltage (VDS) of 600V and a drain current (ID) of 11A, suitable for stable operation in high-voltage environments. The gate-source voltage (VGS) is rated at ±30V and the threshold voltage (Vth) is 3.5V, ensuring good conduction characteristics. Its on-resistance (RDS(ON)) is 380mΩ at a gate voltage of 10V, with excellent conductivity and low power consumption. It uses SJ_Multi-EPI technology to provide higher performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
LSH60R380E-VB Detailed parameter description
- **Model**: LSH60R380E-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: LSH60R380E-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
LSH60R380E-VB MOSFET is widely used in high voltage and high efficiency power electronics. The following are specific examples of its application fields and modules:
1. **Power converter**: In industrial and consumer electronic devices, LSH60R380E-VB can be used in AC-DC and DC-DC converters to provide efficient energy conversion, suitable for power adapter and switching power supply applications.
2. **Inverter**: This MOSFET can be used in solar inverters and wind power generation systems to help convert DC power to AC power and achieve efficient energy management, suitable for the renewable energy field.
3. **Motor drive system**: In motor drive applications such as electric vehicles and industrial automation, LSH60R380E-VB can be used to control the switching of the motor, providing efficient power transmission and control accuracy.
4. **LED Driver**: This device can also play an important role in high-power LED drive circuits, improving the energy efficiency of LEDs through precise current control, and is suitable for commercial and industrial lighting solutions.
5. **Uninterruptible Power Supply (UPS) System**: LSH60R380E-VB can be used as a switching device in a UPS system to ensure reliable power conversion during power outages and ensure the continuous operation of key equipment.
In summary, the high voltage and low on-resistance characteristics of LSH60R380E-VB make it very suitable for a variety of applications in the field of power electronics, providing efficient and reliable power management solutions.
LSH60R380E-VB MOSFET is widely used in high voltage and high efficiency power electronics. The following are specific examples of its application fields and modules:
1. **Power converter**: In industrial and consumer electronic devices, LSH60R380E-VB can be used in AC-DC and DC-DC converters to provide efficient energy conversion, suitable for power adapter and switching power supply applications.
2. **Inverter**: This MOSFET can be used in solar inverters and wind power generation systems to help convert DC power to AC power and achieve efficient energy management, suitable for the renewable energy field.
3. **Motor drive system**: In motor drive applications such as electric vehicles and industrial automation, LSH60R380E-VB can be used to control the switching of the motor, providing efficient power transmission and control accuracy.
4. **LED Driver**: This device can also play an important role in high-power LED drive circuits, improving the energy efficiency of LEDs through precise current control, and is suitable for commercial and industrial lighting solutions.
5. **Uninterruptible Power Supply (UPS) System**: LSH60R380E-VB can be used as a switching device in a UPS system to ensure reliable power conversion during power outages and ensure the continuous operation of key equipment.
In summary, the high voltage and low on-resistance characteristics of LSH60R380E-VB make it very suitable for a variety of applications in the field of power electronics, providing efficient and reliable power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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