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LSH11N70-VB Product details
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Product Introduction
LSH11N70-VB is a high-performance single N-channel MOSFET designed for high-voltage applications, with a maximum drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of ±30V. This MOSFET adopts advanced SJ_Multi-EPI technology, providing a low on-resistance (RDS(ON)) of 370mΩ (at VGS of 10V), and a maximum drain current (ID) of up to 11A. Its turn-on voltage (Vth) is 3.5V, ensuring stability and reliability under various operating conditions. LSH11N70-VB adopts TO251 package, which is suitable for high power density and high efficiency power management solutions, and is widely used in power electronics and automation equipment.
LSH11N70-VB is a high-performance single N-channel MOSFET designed for high-voltage applications, with a maximum drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of ±30V. This MOSFET adopts advanced SJ_Multi-EPI technology, providing a low on-resistance (RDS(ON)) of 370mΩ (at VGS of 10V), and a maximum drain current (ID) of up to 11A. Its turn-on voltage (Vth) is 3.5V, ensuring stability and reliability under various operating conditions. LSH11N70-VB adopts TO251 package, which is suitable for high power density and high efficiency power management solutions, and is widely used in power electronics and automation equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 370mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 370mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **High-voltage power conversion**: LSH11N70-VB is very suitable for high-voltage DC-DC and AC-DC power conversion modules, especially in industrial power supplies, solar inverters and other applications. Its 650V withstand voltage ensures safe and stable operation in high-voltage environments.
2. **Switching mode power supply (SMPS)**: This MOSFET is suitable for use in switching mode power supplies (SMPS), such as adapters, chargers and LED driver power supplies. Its low on-resistance can improve power conversion efficiency and reduce power consumption.
3. **Motor control**: LSH11N70-VB performs well in motor drive and control circuits, can support currents up to 11A, and is suitable for various motor control systems, including power tools, household appliances and industrial automation equipment.
4. **Uninterruptible Power Supply (UPS)**: This MOSFET is also widely used in uninterruptible power supply systems. It can be used as a switching element to provide efficient power conversion and management to ensure continuous power supply to equipment during power failures.
5. **Photovoltaic Inverter**: The LSH11N70-VB is very suitable for use in photovoltaic inverters. It can handle high-voltage DC power and efficiently convert it into AC power, promoting the use of renewable energy and the stability of power systems.
1. **High-voltage power conversion**: LSH11N70-VB is very suitable for high-voltage DC-DC and AC-DC power conversion modules, especially in industrial power supplies, solar inverters and other applications. Its 650V withstand voltage ensures safe and stable operation in high-voltage environments.
2. **Switching mode power supply (SMPS)**: This MOSFET is suitable for use in switching mode power supplies (SMPS), such as adapters, chargers and LED driver power supplies. Its low on-resistance can improve power conversion efficiency and reduce power consumption.
3. **Motor control**: LSH11N70-VB performs well in motor drive and control circuits, can support currents up to 11A, and is suitable for various motor control systems, including power tools, household appliances and industrial automation equipment.
4. **Uninterruptible Power Supply (UPS)**: This MOSFET is also widely used in uninterruptible power supply systems. It can be used as a switching element to provide efficient power conversion and management to ensure continuous power supply to equipment during power failures.
5. **Photovoltaic Inverter**: The LSH11N70-VB is very suitable for use in photovoltaic inverters. It can handle high-voltage DC power and efficiently convert it into AC power, promoting the use of renewable energy and the stability of power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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