LSH11N65-VB Product details
Product introduction:
LSH11N65-VB is a high-performance N-channel MOSFET in TO251 package, designed for high-voltage applications, with a drain-source voltage (VDS) of 650V. Its gate-source voltage (VGS) range is ±30V, ensuring stable operation under various drive voltages. The device has a threshold voltage (Vth) of 3.5V, providing fast switching response. The on-resistance (RDS(ON)) is 370mΩ@VGS=10V, which can significantly reduce conduction losses. The maximum drain current (ID) of LSH11N65-VB is 11A, which is suitable for a wide range of high-voltage power management and control applications. Using SJ_Multi-EPI technology, the device has excellent thermal stability and electrical performance, making it an ideal choice for high-efficiency power systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| Parameter Name| Value|
|--------------------|---------------------------------|
| Package Type| TO251 |
| MOSFET Configuration| Single N-Channel|
| Drain-Source Voltage (VDS) | 650V |
| Gate Voltage (VGS) | ±30V |
| Threshold Voltage (Vth) | 3.5V |
| On-Resistance (RDS(ON)) | 370mΩ @ VGS=10V |
| Continuous Drain Current (ID) | 11A |
| Technology| SJ_Multi-EPI |
Domain and module applications:
1. **High-voltage power converter**
LSH11N65-VB is widely used in high-voltage power converters and is suitable for AC-DC and DC-DC conversion modules. Its high withstand voltage characteristics enable it to handle complex power conversion and ensure stable operation of equipment under high voltage conditions.
2. **LED lighting driver**
This MOSFET is very effective in LED lighting drivers, providing a stable current to ensure that LED lamps maintain high brightness and long life during operation. Its low on-resistance helps improve drive efficiency and reduce energy consumption.
3. **Motor control**
In motor control circuits, LSH11N65-VB can be used as a switching device to control the start and stop and speed regulation of the motor. Its reliable performance is particularly important in high-voltage applications and is suitable for industrial and home appliance motor control systems.
4. **Solar Inverter**
As an important component of solar inverter, LSH11N65-VB can effectively convert direct current generated by photovoltaic into alternating current. Its high withstand voltage capability and efficient switching characteristics ensure that the inverter maintains excellent performance under various working conditions.
5. **Industrial Power Module**
This device is suitable for various industrial power modules and can meet the needs of high-efficiency and high-stability power supply. It is widely used in power systems, automation equipment and industrial equipment to provide high-reliability power supply solutions.
In summary, the high withstand voltage and excellent performance of LSH11N65-VB make it have broad application prospects in many fields such as high-voltage power conversion, LED lighting drive, motor control, solar inverter and industrial power module. Its excellent performance provides a reliable solution for these demanding applications.
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