LSH11N65F-VB Product details
Product introduction:
LSH11N65F-VB is a high voltage N-channel power MOSFET designed in TO251 package to meet the needs of high-efficiency power conversion. With a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 11A, the device is suitable for high voltage and high load applications. Its on-resistance (RDS(ON)) at a gate voltage of 10V is 370mΩ, ensuring excellent conductivity under high power conditions. Using advanced SJ_Multi-EPI technology, this MOSFET is able to provide excellent efficiency and stability in a variety of power electronics applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Model**: LSH11N65F-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
1. **Switching mode power supply (SMPS)**: LSH11N65F-VB is widely used in switching mode power supplies, which can efficiently convert electrical energy under high voltage conditions and is suitable for power management modules in computer power supplies and communication equipment.
2. **LED driver power supply**: This MOSFET can be used in high-power LED lighting systems to ensure stable current control under high voltage operation, thereby improving the brightness and life of LEDs.
3. **Industrial inverter**: In solar inverters and wind power generation systems, LSH11N65F-VB acts as a switching device to effectively convert and manage electricity and improve the energy utilization efficiency of renewable energy systems.
4. **Home appliance control**: LSH11N65F-VB is also suitable for power control of various home appliances, such as air conditioners and washing machines, providing efficient energy conversion and protection functions to ensure stable operation of home appliances under high loads.
5. **Electric vehicle drive system**: In the drive control module of electric vehicles, this device can provide high-voltage power management, help achieve efficient power conversion, and support the reliable operation of electric vehicles under various working conditions.
With its excellent high-voltage performance and low on-resistance, LSH11N65F-VB is widely used in many fields, especially in applications requiring efficient energy conversion and current control, providing a solid foundation for power electronic equipment.
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