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LSH11N60-VB Product details

Product introduction:

LSH11N60-VB Product Introduction

LSH11N60-VB is a high-voltage single N-channel MOSFET in TO251 package, designed for efficient power conversion and control. The device supports drain-source voltage (VDS) up to 600V and gate-source voltage (VGS) of ±30V, suitable for a variety of high-voltage applications. Its gate threshold voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 380mΩ@VGS=10V, and maximum drain current (ID) is 11A. LSH11N60-VB uses advanced multi-junction substrate (SJ_Multi-EPI) technology to provide excellent performance and reliability in high-power applications, making it an ideal choice for modern power management systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 600V 3.5V 11A 380mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 600V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 600V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
Detailed parameter description of LSH11N60-VB

1. **Package type**: TO251
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 380mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 11A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)

Domain and module applications:

Applications and module examples

1. **Power converter**: LSH11N60-VB is widely used in switch mode power supplies (SMPS), which can effectively handle high voltage and high current to provide stable power for various electronic devices. Its high withstand voltage characteristics make it a reliable choice in power supply design, especially for industrial equipment, server power supplies and communication equipment.

2. **Inverter**: In inverter design, LSH11N60-VB can be used to convert DC power to AC power, which is suitable for renewable energy systems such as solar inverters and wind inverters. Its high voltage handling capability and low on-resistance can improve overall energy efficiency and reduce energy loss.

3. **Motor drive application**: This MOSFET is suitable for motor control modules, which can efficiently regulate the drive current of the motor. It is commonly used in industrial automation, robotics and various power tools. The high efficiency characteristics of LSH11N60-VB can help the motor run smoothly under high load and improve the working efficiency of the system.

4. **LED lighting driver**: In LED lighting solutions, LSH11N60-VB is used for high-voltage LED driver power to ensure high efficiency and stability of LED lighting. It is particularly suitable for commercial lighting and street lighting systems to help reduce energy consumption and extend the service life of lamps.

5. **Charger and battery management system**: LSH11N60-VB is also widely used in battery management and charger design, which can manage charging current and voltage to ensure that the battery is charged within a safe range. It is suitable for a variety of application scenarios such as electric vehicles and portable electronic devices to ensure a safe and efficient charging process.

As a high-efficiency MOSFET, LSH11N60-VB has shown wide application potential in multiple industries and fields with its high withstand voltage, low on-resistance and reliability, making it a preferred device for high-voltage power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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