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LSH11N60E-VB Product details

Product introduction:

Product Introduction

**LSH11N60E-VB** is a high-performance N-Channel MOSFET in TO251 package, designed for high-voltage power conversion and switching applications. The device has a drain-source voltage (VDS) of 600V, which is suitable for stable operation of a variety of high-voltage electronic circuits. The gate-source voltage (VGS) range is ±30V and the threshold voltage (Vth) is 3.5V, ensuring good switching performance. At VGS=10V, the on-resistance (RDS(ON)) is 380mΩ and the maximum leakage current (ID) is 11A. LSH11N60E-VB adopts advanced SJ_Multi-EPI technology, with excellent thermal performance and low conduction losses, making it perform well in high-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 600V 3.5V 11A 380mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 600V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 600V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
Detailed parameter description

| Parameter| Description|
|------------------|----------------------------------------|
| **Model** | LSH11N60E-VB |
| **Package** | TO251 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 600V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 380mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 11A |
| **Technology** | SJ_Multi-EPI |

Domain and module applications:

Applications and module examples

1. **Switching power supply**:
LSH11N60E-VB is very suitable for the design of high-voltage switching power supply, especially in power adapters and DC-DC converters, where its high VDS and low RDS(ON) values help improve efficiency and reduce power loss.

2. **Motor drive**:
This MOSFET can be used in motor control systems, especially in inverters and servo motor drives, to provide stable current and efficient power transmission to ensure smooth operation of the motor.

3. **LED lighting**:
LSH11N60E-VB also performs well in high-voltage LED drive circuits, providing reliable current control to ensure high efficiency and long life of LED lighting systems.

4. **Industrial automation equipment**:
This device has a wide range of applications in industrial automation and control systems, suitable for high-voltage power modules, and supports the stable operation of various high-power industrial equipment.

5. **Renewable Energy Systems**:
LSH11N60E-VB is used for high-voltage DC-DC conversion in solar inverters and wind power generation systems, helping to improve energy conversion efficiency and achieve effective use of renewable energy.

Through these application examples, LSH11N60E-VB shows its wide applicability in high-voltage and high-power fields, especially for power electronic equipment with strict requirements for high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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