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LSH07N80A-VB Product details
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1. LSH07N80A-VB Product Introduction
LSH07N80A-VB is a high-voltage single N-channel MOSFET in TO251 package with excellent performance, designed for high-voltage applications. Its drain-source voltage (VDS) is as high as 800V, capable of handling current switching and control in high-voltage environments, with a maximum drain current (ID) of 7A. Based on SJ_Multi-EPI (super junction multi-epitaxial) technology, this MOSFET provides excellent on-resistance (RDS(ON)) performance, with RDS(ON) of 850mΩ (at a gate-source voltage of 10V), greatly reducing power loss and heat generation, improving system efficiency, and is widely used in high-performance, high-voltage switching circuits.
LSH07N80A-VB is a high-voltage single N-channel MOSFET in TO251 package with excellent performance, designed for high-voltage applications. Its drain-source voltage (VDS) is as high as 800V, capable of handling current switching and control in high-voltage environments, with a maximum drain current (ID) of 7A. Based on SJ_Multi-EPI (super junction multi-epitaxial) technology, this MOSFET provides excellent on-resistance (RDS(ON)) performance, with RDS(ON) of 850mΩ (at a gate-source voltage of 10V), greatly reducing power loss and heat generation, improving system efficiency, and is widely used in high-performance, high-voltage switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. LSH07N80A-VB Detailed parameter description
1. **Package type**: TO251
- The TO251 package is compact and has good heat dissipation performance, suitable for space-constrained designs.
2. **Channel type**: Single-N-Channel
- The single-N-channel design is suitable for efficient current control and is often used in high-voltage and high-power applications.
3. **Drain-source voltage (VDS)**: 800V
- The high drain-source voltage capability of the device is suitable for harsh high-voltage environments, enabling safe and stable operation.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a wider gate drive voltage range, flexible to meet different control circuit requirements.
5. **Threshold voltage (Vth)**: 3.5V
- The moderate threshold voltage enables the MOSFET to respond quickly when turned on, which helps to improve switching efficiency.
6. **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
- The relatively low on-resistance reduces losses when large currents are transmitted, thereby improving overall efficiency.
7. **Drain current (ID)**: 7A
- The maximum drain current is 7A, which is suitable for medium and high power applications.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxial Technology)
- This technology effectively improves the conductivity and heat dissipation performance of the device, making it stable and reliable under high frequency and high power conditions.
1. **Package type**: TO251
- The TO251 package is compact and has good heat dissipation performance, suitable for space-constrained designs.
2. **Channel type**: Single-N-Channel
- The single-N-channel design is suitable for efficient current control and is often used in high-voltage and high-power applications.
3. **Drain-source voltage (VDS)**: 800V
- The high drain-source voltage capability of the device is suitable for harsh high-voltage environments, enabling safe and stable operation.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a wider gate drive voltage range, flexible to meet different control circuit requirements.
5. **Threshold voltage (Vth)**: 3.5V
- The moderate threshold voltage enables the MOSFET to respond quickly when turned on, which helps to improve switching efficiency.
6. **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
- The relatively low on-resistance reduces losses when large currents are transmitted, thereby improving overall efficiency.
7. **Drain current (ID)**: 7A
- The maximum drain current is 7A, which is suitable for medium and high power applications.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxial Technology)
- This technology effectively improves the conductivity and heat dissipation performance of the device, making it stable and reliable under high frequency and high power conditions.
Domain and module applications：
III. Application fields and module examples
1. **Photovoltaic inverter**
In photovoltaic inverters, LSH07N80A-VB is used to convert DC to AC. With its 800V high voltage tolerance, it ensures high efficiency and low power consumption, thereby improving energy utilization.
2. **Industrial motor drive**
LSH07N80A-VB is suitable for industrial motor control, especially high-voltage motor applications. This MOSFET can achieve efficient current switching and control in motor drive systems, reduce heat and power consumption, and extend equipment life.
3. **Electric vehicle charging equipment**
As a core component in high-voltage charging equipment, LSH07N80A-VB can handle high voltage input and provide stable power conversion to ensure safe and efficient charging of electric vehicle batteries.
4. **Switching Power Supply (SMPS)**
As a high-voltage switching element in the switching power supply, this device improves the energy efficiency and stability of the overall system with its low RDS(ON) and high voltage withstand capability, and is suitable for AC/DC converters and DC/DC converters.
5. **LED Lighting Driver**
In LED lighting drivers, LSH07N80A-VB can provide efficient current control, ensuring low temperature and high performance during long-term operation, effectively extending the service life of LED lamps.
6. **Uninterruptible Power Supply (UPS)**
LSH07N80A-VB is suitable for UPS systems as an efficient switching element to ensure fast response and stability of power switching, provide reliable power protection, especially to maintain the normal operation of equipment in the event of power failure.
1. **Photovoltaic inverter**
In photovoltaic inverters, LSH07N80A-VB is used to convert DC to AC. With its 800V high voltage tolerance, it ensures high efficiency and low power consumption, thereby improving energy utilization.
2. **Industrial motor drive**
LSH07N80A-VB is suitable for industrial motor control, especially high-voltage motor applications. This MOSFET can achieve efficient current switching and control in motor drive systems, reduce heat and power consumption, and extend equipment life.
3. **Electric vehicle charging equipment**
As a core component in high-voltage charging equipment, LSH07N80A-VB can handle high voltage input and provide stable power conversion to ensure safe and efficient charging of electric vehicle batteries.
4. **Switching Power Supply (SMPS)**
As a high-voltage switching element in the switching power supply, this device improves the energy efficiency and stability of the overall system with its low RDS(ON) and high voltage withstand capability, and is suitable for AC/DC converters and DC/DC converters.
5. **LED Lighting Driver**
In LED lighting drivers, LSH07N80A-VB can provide efficient current control, ensuring low temperature and high performance during long-term operation, effectively extending the service life of LED lamps.
6. **Uninterruptible Power Supply (UPS)**
LSH07N80A-VB is suitable for UPS systems as an efficient switching element to ensure fast response and stability of power switching, provide reliable power protection, especially to maintain the normal operation of equipment in the event of power failure.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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