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LSH07N70-VB Product details

Product introduction:

LSH07N70-VB Product Introduction

The LSH07N70-VB is a high voltage N-channel MOSFET in a TO251 package that can handle drain-source voltages (VDS) up to 700V and drain currents (ID) of 10A, making it suitable for high voltage applications. Its gate-source voltage (VGS) is rated at ±30V and its threshold voltage (Vth) is 3.5V, ensuring stable conduction behavior. The on-resistance (RDS(ON)) is 600mΩ at a gate voltage of 10V, with good conductivity and switching performance. The use of SJ_Multi-EPI technology improves the efficiency and reliability of the device, making it suitable for use in high-efficiency power conversion and power management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 700V 3.5V 10A 600mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 700V 3.5V 10A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 700V 3.5V 10A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
LSH07N70-VB Detailed parameter description

- **Model**: LSH07N70-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 600mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Application fields and module examples

LSH07N70-VB MOSFET is widely used in high voltage and high efficiency conversion scenarios. The following are specific examples of its application fields and modules:

1. **Industrial power converter**: In high voltage AC-DC and DC-DC converters, this device can provide efficient power conversion, suitable for industrial control equipment, automation systems and high voltage power applications.

2. **Inverter and motor drive**: This MOSFET can be used in inverter and motor drive applications such as solar photovoltaic inverters, wind power generation equipment and industrial motor drives to help achieve efficient power conversion and precise motor control.

3. **Uninterruptible power supply (UPS)**: In UPS systems, LSH07N70-VB can be used as a key switching device to provide stable power switching and efficient energy management to ensure continuous operation of equipment during power outages.

4. **Electric vehicle charging system**: This device can be used in high-voltage charging piles and battery management systems for electric vehicles to optimize charging efficiency and ensure efficient and safe energy transmission.

5. **High-voltage LED driver**: In high-power LED driver circuits, LSH07N70-VB improves the brightness and energy efficiency of LEDs by precisely controlling current, and is suitable for high-voltage lighting equipment such as street lights and industrial lighting systems.

With its high withstand voltage characteristics, low on-resistance and high-efficiency switching performance, LSH07N70-VB is particularly suitable for applications that require efficient power conversion and precise control, helping to improve energy efficiency and optimize power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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