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LSH04N70-VB Product details
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LSH04N70-VB Product Introduction
LSH04N70-VB is a high-voltage single N-channel MOSFET in TO251 package with excellent high-voltage resistance and reliable switching performance. The device supports drain-source voltage (VDS) up to 700V and gate-source voltage (VGS) of ±30V, suitable for various high-voltage applications. Its gate threshold voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 1000mΩ@VGS=10V, and maximum drain current (ID) is 5A. With the help of multi-junction substrate (SJ_Multi-EPI) technology, LSH04N70-VB has demonstrated outstanding performance in the field of high-efficiency power conversion and is suitable for power management and industrial control applications requiring high reliability and stability.
LSH04N70-VB is a high-voltage single N-channel MOSFET in TO251 package with excellent high-voltage resistance and reliable switching performance. The device supports drain-source voltage (VDS) up to 700V and gate-source voltage (VGS) of ±30V, suitable for various high-voltage applications. Its gate threshold voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 1000mΩ@VGS=10V, and maximum drain current (ID) is 5A. With the help of multi-junction substrate (SJ_Multi-EPI) technology, LSH04N70-VB has demonstrated outstanding performance in the field of high-efficiency power conversion and is suitable for power management and industrial control applications requiring high reliability and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description of LSH04N70-VB
1. **Package type**: TO251
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 700V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 5A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
1. **Package type**: TO251
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 700V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 5A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
Domain and module applications：
Application fields and module examples
1. **Industrial power supply system**: LSH04N70-VB is particularly suitable for high-voltage power supply systems in the industrial field, including AC-DC converters and high-voltage switching power supplies. Its 700V withstand voltage characteristics can ensure stable operation of the equipment in harsh industrial environments, and is particularly suitable for high-voltage management in power grid power supply and automation control systems.
2. **Inverter**: This MOSFET is widely used in inverters, especially high-power inverters and DC-AC conversion in photovoltaic systems and wind energy systems. The high voltage withstand capability and low on-resistance of LSH04N70-VB enable it to efficiently convert electrical energy in these systems.
3. **Motor drive**: In motor control and drive applications, LSH04N70-VB is responsible for controlling the power output and speed regulation of the motor, and is particularly suitable for high-voltage motor drives in industrial automation systems. This helps to improve energy efficiency and optimize the operating performance of the motor.
4. **LED driver**: This MOSFET is also suitable for high-voltage LED lighting drivers. It ensures efficient and stable operation of LED lighting systems through precise current control. Especially in commercial and outdoor lighting systems, the reliability and long life of LSH04N70-VB can effectively improve the stability of the system.
5. **High-voltage charging equipment**: In high-voltage charging systems and battery management modules, LSH04N70-VB can also be used to manage the charging process to ensure safe and efficient charging of batteries, which is suitable for applications in electric vehicle charging piles and energy storage equipment.
As a high-voltage, high-performance MOSFET, LSH04N70-VB has demonstrated excellent switching efficiency and reliability in multiple key application areas, making it one of the commonly used power devices in industrial and consumer electronics.
1. **Industrial power supply system**: LSH04N70-VB is particularly suitable for high-voltage power supply systems in the industrial field, including AC-DC converters and high-voltage switching power supplies. Its 700V withstand voltage characteristics can ensure stable operation of the equipment in harsh industrial environments, and is particularly suitable for high-voltage management in power grid power supply and automation control systems.
2. **Inverter**: This MOSFET is widely used in inverters, especially high-power inverters and DC-AC conversion in photovoltaic systems and wind energy systems. The high voltage withstand capability and low on-resistance of LSH04N70-VB enable it to efficiently convert electrical energy in these systems.
3. **Motor drive**: In motor control and drive applications, LSH04N70-VB is responsible for controlling the power output and speed regulation of the motor, and is particularly suitable for high-voltage motor drives in industrial automation systems. This helps to improve energy efficiency and optimize the operating performance of the motor.
4. **LED driver**: This MOSFET is also suitable for high-voltage LED lighting drivers. It ensures efficient and stable operation of LED lighting systems through precise current control. Especially in commercial and outdoor lighting systems, the reliability and long life of LSH04N70-VB can effectively improve the stability of the system.
5. **High-voltage charging equipment**: In high-voltage charging systems and battery management modules, LSH04N70-VB can also be used to manage the charging process to ensure safe and efficient charging of batteries, which is suitable for applications in electric vehicle charging piles and energy storage equipment.
As a high-voltage, high-performance MOSFET, LSH04N70-VB has demonstrated excellent switching efficiency and reliability in multiple key application areas, making it one of the commonly used power devices in industrial and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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