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LSH04N65-VB Product details
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Product Introduction
**LSH04N65-VB** is a high voltage N-Channel MOSFET in TO251 package, designed for high voltage power conversion and switching applications. The device has a drain-source voltage (VDS) of 650V, suitable for stable operation of high voltage circuits. The gate-source voltage (VGS) range is ±30V, and the threshold voltage (Vth) is 3.5V, ensuring good switching performance. When VGS=10V, the on-resistance (RDS(ON)) is 950mΩ and the maximum drain current (ID) is 5A. LSH04N65-VB adopts SJ_Multi-EPI technology, with low conduction loss and excellent heat dissipation performance, suitable for a variety of high-efficiency power electronic systems.
**LSH04N65-VB** is a high voltage N-Channel MOSFET in TO251 package, designed for high voltage power conversion and switching applications. The device has a drain-source voltage (VDS) of 650V, suitable for stable operation of high voltage circuits. The gate-source voltage (VGS) range is ±30V, and the threshold voltage (Vth) is 3.5V, ensuring good switching performance. When VGS=10V, the on-resistance (RDS(ON)) is 950mΩ and the maximum drain current (ID) is 5A. LSH04N65-VB adopts SJ_Multi-EPI technology, with low conduction loss and excellent heat dissipation performance, suitable for a variety of high-efficiency power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
| Parameter| Description|
|------------------|----------------------------------------|
| **Model** | LSH04N65-VB |
| **Package** | TO251 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 650V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 950mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 5A |
| **Technology** | SJ_Multi-EPI |
| Parameter| Description|
|------------------|----------------------------------------|
| **Model** | LSH04N65-VB |
| **Package** | TO251 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 650V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 950mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 5A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications：
Applications and module examples
1. **Switching power supply**:
LSH04N65-VB is very suitable for high voltage switching power supply design. Its high voltage capability and low conduction loss make it an ideal choice for power management systems such as power adapters and DC-DC converters.
2. **LED drive circuit**:
In high voltage LED drive circuits, LSH04N65-VB can provide stable current control to ensure efficient LED lighting system performance, especially for high power LED lighting equipment.
3. **Motor control**:
LSH04N65-VB is also very suitable for industrial motor drives and inverters, providing stable high voltage control for motor starting and operation, reducing energy loss.
4. **Industrial control equipment**:
This MOSFET performs well in high voltage industrial equipment and can be used in systems with high power requirements such as power transmission and automation control to ensure stable operation of the equipment.
5. **Renewable Energy Systems**:
LSH04N65-VB is used for high voltage DC-DC conversion in solar inverters and wind power generation systems, helping to improve energy conversion efficiency and achieve efficient renewable energy utilization.
Through these application examples, we can see the wide applicability of LSH04N65-VB in high voltage and high power fields, especially for power electronic systems that require high performance and stability.
1. **Switching power supply**:
LSH04N65-VB is very suitable for high voltage switching power supply design. Its high voltage capability and low conduction loss make it an ideal choice for power management systems such as power adapters and DC-DC converters.
2. **LED drive circuit**:
In high voltage LED drive circuits, LSH04N65-VB can provide stable current control to ensure efficient LED lighting system performance, especially for high power LED lighting equipment.
3. **Motor control**:
LSH04N65-VB is also very suitable for industrial motor drives and inverters, providing stable high voltage control for motor starting and operation, reducing energy loss.
4. **Industrial control equipment**:
This MOSFET performs well in high voltage industrial equipment and can be used in systems with high power requirements such as power transmission and automation control to ensure stable operation of the equipment.
5. **Renewable Energy Systems**:
LSH04N65-VB is used for high voltage DC-DC conversion in solar inverters and wind power generation systems, helping to improve energy conversion efficiency and achieve efficient renewable energy utilization.
Through these application examples, we can see the wide applicability of LSH04N65-VB in high voltage and high power fields, especially for power electronic systems that require high performance and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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