中文
English
LSG70R570GT-VB Product details
Back to previous pageProduct introduction：
LSG70R570GT-VB MOSFET Product Introduction
The LSG70R570GT-VB is a high voltage single N-channel MOSFET designed to meet stringent power management requirements. It is packaged in TO252 and has a drain-source voltage (VDS) capability of up to 700V, making it suitable for operation in high voltage environments. The device has a gate voltage (VGS) of ±30V and a threshold voltage (Vth) of 3.5V, ensuring stable operation in various electrical systems. Its on-resistance (RDS(ON)) is 600mΩ (@ VGS=10V), which gives it good conductivity, thereby reducing power consumption and heat generation. The LSG70R570GT-VB has a rated drain current (ID) of 10A and is widely used in power conversion, switching circuits, and high voltage drives.
The LSG70R570GT-VB is a high voltage single N-channel MOSFET designed to meet stringent power management requirements. It is packaged in TO252 and has a drain-source voltage (VDS) capability of up to 700V, making it suitable for operation in high voltage environments. The device has a gate voltage (VGS) of ±30V and a threshold voltage (Vth) of 3.5V, ensuring stable operation in various electrical systems. Its on-resistance (RDS(ON)) is 600mΩ (@ VGS=10V), which gives it good conductivity, thereby reducing power consumption and heat generation. The LSG70R570GT-VB has a rated drain current (ID) of 10A and is widely used in power conversion, switching circuits, and high voltage drives.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | 600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
LSG70R570GT-VB MOSFET Detailed Parameter Description
| Parameter Name| Value|
|--------------------|---------------------------------|
| Package Type| TO252 |
| MOSFET Configuration| Single N-Channel|
| Drain-Source Voltage (VDS) | 700V |
| Gate Voltage (VGS) | ±30V |
| Threshold Voltage (Vth) | 3.5V |
| On-Resistance (RDS(ON)) | 600mΩ @ VGS = 10V |
| Continuous Drain Current (ID) | 10A |
| Technology| SJ_Multi-EPI |
| Parameter Name| Value|
|--------------------|---------------------------------|
| Package Type| TO252 |
| MOSFET Configuration| Single N-Channel|
| Drain-Source Voltage (VDS) | 700V |
| Gate Voltage (VGS) | ±30V |
| Threshold Voltage (Vth) | 3.5V |
| On-Resistance (RDS(ON)) | 600mΩ @ VGS = 10V |
| Continuous Drain Current (ID) | 10A |
| Technology| SJ_Multi-EPI |
Domain and module applications：
Applications and module examples
1. **High-voltage switching power supply**
The LSG70R570GT-VB is ideal for high-voltage switching power supply designs, which can effectively convert AC power to DC power, providing stable power for various electrical devices. Its low on-resistance helps reduce switching losses and improve overall system efficiency.
2. **Motor control**
This MOSFET is also widely used in motor control circuits and is suitable for motor drive and speed regulation applications. Its high voltage withstand capability enables it to operate stably in harsh environments, ensuring reliable operation of the motor.
3. **Photovoltaic inverter**
In photovoltaic inverter applications, the LSG70R570GT-VB can be used to convert DC power generated by photovoltaic cells into AC power to meet household and industrial power needs. Its high withstand voltage characteristics and good conductivity ensure safe and efficient operation in photovoltaic systems.
4. **LED drive circuit**
LSG70R570GT-VB can be used as a key switching element in the LED drive circuit, suitable for high-voltage LED lighting solutions, ensuring stable brightness output and energy efficiency.
5. **Power modules and power electronic equipment**
This MOSFET is suitable for various power modules and power electronic equipment, which can cope with the voltage and current requirements in different application scenarios, provide reliable performance, and ensure the safe operation of equipment in high-voltage environments.
In summary, LSG70R570GT-VB has demonstrated its excellent performance and wide application potential in many fields such as high-voltage switching power supplies, motor control, photovoltaic inverters and LED drivers, and is an indispensable component in high-voltage applications.
1. **High-voltage switching power supply**
The LSG70R570GT-VB is ideal for high-voltage switching power supply designs, which can effectively convert AC power to DC power, providing stable power for various electrical devices. Its low on-resistance helps reduce switching losses and improve overall system efficiency.
2. **Motor control**
This MOSFET is also widely used in motor control circuits and is suitable for motor drive and speed regulation applications. Its high voltage withstand capability enables it to operate stably in harsh environments, ensuring reliable operation of the motor.
3. **Photovoltaic inverter**
In photovoltaic inverter applications, the LSG70R570GT-VB can be used to convert DC power generated by photovoltaic cells into AC power to meet household and industrial power needs. Its high withstand voltage characteristics and good conductivity ensure safe and efficient operation in photovoltaic systems.
4. **LED drive circuit**
LSG70R570GT-VB can be used as a key switching element in the LED drive circuit, suitable for high-voltage LED lighting solutions, ensuring stable brightness output and energy efficiency.
5. **Power modules and power electronic equipment**
This MOSFET is suitable for various power modules and power electronic equipment, which can cope with the voltage and current requirements in different application scenarios, provide reliable performance, and ensure the safe operation of equipment in high-voltage environments.
In summary, LSG70R570GT-VB has demonstrated its excellent performance and wide application potential in many fields such as high-voltage switching power supplies, motor control, photovoltaic inverters and LED drivers, and is an indispensable component in high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
