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LSG65R930GT-VB Product details
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LSG65R930GT-VB Product Introduction
The LSG65R930GT-VB is a high-performance single N-channel MOSFET in a TO252 package, designed for high voltage and medium current applications. The device has a maximum drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) range of ±30V. Its gate threshold voltage (Vth) is 3.5V, which is suitable for operation under high voltage conditions. At VGS = 10V, the on-resistance (RDS(ON)) is 1000mΩ and the maximum drain current (ID) is 5A. This makes the LSG65R930GT-VB perform well in applications with high efficiency requirements.
The LSG65R930GT-VB is a high-performance single N-channel MOSFET in a TO252 package, designed for high voltage and medium current applications. The device has a maximum drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) range of ±30V. Its gate threshold voltage (Vth) is 3.5V, which is suitable for operation under high voltage conditions. At VGS = 10V, the on-resistance (RDS(ON)) is 1000mΩ and the maximum drain current (ID) is 5A. This makes the LSG65R930GT-VB perform well in applications with high efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of LSG65R930GT-VB
1. **Package type**: TO252
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 5A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
1. **Package type**: TO252
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 5A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
Domain and module applications：
Applications and module examples
1. **Power management system**: LSG65R930GT-VB is widely used in power management systems, especially in switching power supplies and DC-DC converters. Its high voltage withstand capability and low on-resistance ensure high efficiency in the energy conversion process, reduce energy loss and improve overall performance.
2. **Power tools**: In the drive system of power tools, this MOSFET can be used to control the switching of the motor, provide efficient current regulation, and ensure stable operation of the equipment under different load conditions, especially suitable for high-power power tools.
3. **Inverter**: LSG65R930GT-VB is suitable for inverter applications, especially in renewable energy systems (such as solar and wind inverters), which can convert DC power into efficient AC power to provide clean energy for homes and industries.
4. **LED lighting system**: This MOSFET can also be used in LED driver power supplies to help control current, achieve stable LED output, ensure high efficiency and long life of the lighting system, and is suitable for commercial and residential lighting solutions.
5. **Battery management and charging system**: LSG65R930GT-VB is used in battery management systems to control the charging and discharging process of the battery, ensure safe operation of the battery at high voltage, and extend battery life, especially in electric vehicles and energy storage devices.
As a high-performance MOSFET, LSG65R930GT-VB has become an indispensable component of modern power electronics products with its excellent electrical performance and wide range of applications.
1. **Power management system**: LSG65R930GT-VB is widely used in power management systems, especially in switching power supplies and DC-DC converters. Its high voltage withstand capability and low on-resistance ensure high efficiency in the energy conversion process, reduce energy loss and improve overall performance.
2. **Power tools**: In the drive system of power tools, this MOSFET can be used to control the switching of the motor, provide efficient current regulation, and ensure stable operation of the equipment under different load conditions, especially suitable for high-power power tools.
3. **Inverter**: LSG65R930GT-VB is suitable for inverter applications, especially in renewable energy systems (such as solar and wind inverters), which can convert DC power into efficient AC power to provide clean energy for homes and industries.
4. **LED lighting system**: This MOSFET can also be used in LED driver power supplies to help control current, achieve stable LED output, ensure high efficiency and long life of the lighting system, and is suitable for commercial and residential lighting solutions.
5. **Battery management and charging system**: LSG65R930GT-VB is used in battery management systems to control the charging and discharging process of the battery, ensure safe operation of the battery at high voltage, and extend battery life, especially in electric vehicles and energy storage devices.
As a high-performance MOSFET, LSG65R930GT-VB has become an indispensable component of modern power electronics products with its excellent electrical performance and wide range of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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