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LSG65R570GT-VB Product details
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Product Introduction
**LSG65R570GT-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for high voltage applications. The device has a drain-source voltage (VDS) of 650V, enabling it to operate stably in a variety of high-voltage electronic circuits. Its gate-source voltage (VGS) range is ±30V and its threshold voltage (Vth) is 3.5V, ensuring good switching performance. When VGS=10V, the on-resistance (RDS(ON)) is 500mΩ, providing efficient current transfer and suitable for high-power applications. LSG65R570GT-VB adopts SJ_Multi-EPI technology, with excellent thermal performance and reliability, ensuring stable operation under harsh conditions.
**LSG65R570GT-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for high voltage applications. The device has a drain-source voltage (VDS) of 650V, enabling it to operate stably in a variety of high-voltage electronic circuits. Its gate-source voltage (VGS) range is ±30V and its threshold voltage (Vth) is 3.5V, ensuring good switching performance. When VGS=10V, the on-resistance (RDS(ON)) is 500mΩ, providing efficient current transfer and suitable for high-power applications. LSG65R570GT-VB adopts SJ_Multi-EPI technology, with excellent thermal performance and reliability, ensuring stable operation under harsh conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter| Description|
|------------------|----------------------------------------|
| **Model** | LSG65R570GT-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 650V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 500mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 9A |
| **Technology** | SJ_Multi-EPI |
| Parameter| Description|
|------------------|----------------------------------------|
| **Model** | LSG65R570GT-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 650V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 500mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 9A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications：
Application fields and module examples
1. **Switching power supply**:
LSG65R570GT-VB performs well in high-voltage switching power supply design and is suitable for power adapters and DC-DC converters. Its high VDS value and low on-resistance characteristics effectively improve conversion efficiency and reduce power loss.
2. **Motor drive**:
This MOSFET can be used in motor drive and control systems, especially in inverter applications, to provide precise current control and efficient energy transmission to ensure smooth operation of the motor.
3. **LED lighting**:
LSG65R570GT-VB can be applied to LED drive circuits, especially in high-voltage LED lighting systems, to provide stable current output, improve lighting effects and extend the service life of lamps.
4. **Industrial automation equipment**:
In industrial automation and control systems, this MOSFET can be used in high-voltage power modules to support a variety of high-voltage and high-power industrial equipment to ensure system stability and reliability.
5. **Renewable Energy Systems**:
LSG65R570GT-VB is also widely used in solar inverters and wind energy systems, suitable for high-voltage DC-DC conversion, improving energy conversion efficiency, and supporting the effective use of renewable energy.
Through these application examples, LSG65R570GT-VB shows its wide applicability in high-voltage and high-power fields, especially for power electronic equipment that requires high performance and high reliability.
1. **Switching power supply**:
LSG65R570GT-VB performs well in high-voltage switching power supply design and is suitable for power adapters and DC-DC converters. Its high VDS value and low on-resistance characteristics effectively improve conversion efficiency and reduce power loss.
2. **Motor drive**:
This MOSFET can be used in motor drive and control systems, especially in inverter applications, to provide precise current control and efficient energy transmission to ensure smooth operation of the motor.
3. **LED lighting**:
LSG65R570GT-VB can be applied to LED drive circuits, especially in high-voltage LED lighting systems, to provide stable current output, improve lighting effects and extend the service life of lamps.
4. **Industrial automation equipment**:
In industrial automation and control systems, this MOSFET can be used in high-voltage power modules to support a variety of high-voltage and high-power industrial equipment to ensure system stability and reliability.
5. **Renewable Energy Systems**:
LSG65R570GT-VB is also widely used in solar inverters and wind energy systems, suitable for high-voltage DC-DC conversion, improving energy conversion efficiency, and supporting the effective use of renewable energy.
Through these application examples, LSG65R570GT-VB shows its wide applicability in high-voltage and high-power fields, especially for power electronic equipment that requires high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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