LSG65R380GT-VB Product details
Product introduction:
LSG65R380GT-VB is a high-efficiency N-channel MOSFET in a TO251 package, designed for high-voltage power applications. The device has a drain-source voltage (VDS) of 650V, making it ideal for high-voltage power conversion and switching circuits. Its threshold voltage (Vth) is 3.5V, ensuring effective conduction under appropriate gate drive voltage. The on-resistance (RDS(ON)) is 370mΩ@VGS=10V, providing lower conduction losses, thereby improving the overall system energy efficiency and reducing heat generation. The maximum continuous current (ID) is 11A, suitable for a variety of medium-power applications. Using SJ_Multi-EPI technology, this MOSFET excels in thermal performance and reliability, can operate stably in harsh working environments, and is an ideal choice for modern high-voltage power supply designs.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| **Parameter** | **Description** |
|----------------------|--------------------------|
| **Model** | LSG65R380GT-VB |
| **Package** | TO251 |
| **Configuration** | Single N-channel|
| **Drain-Source Voltage (VDS)** | 650V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 370mΩ @ VGS=10V |
| **Maximum Continuous Current (ID)** | 11A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications:
LSG65R380GT-VB is widely used in multiple fields and modules, including:
1. **Power management**: This MOSFET performs well in switching power supplies (SMPS) and DC-DC converters (DC-DC). Its 650V withstand voltage and 370mΩ on-resistance enable it to efficiently control current, making it suitable for various consumer electronics, industrial power supplies and computer power modules, providing efficient and stable power solutions.
2. **Motor drive**: As a switching element in the motor drive circuit, LSG65R380GT-VB can be used to control DC motors and stepper motors. It is widely used in the drive systems of automation equipment, household appliances and electric vehicles to ensure efficient and reliable motor operation.
3. **LED drive**: This device is suitable for the drive circuit in LED lighting and display systems. It can provide stable current to ensure that the LED operates at high efficiency. It is widely used in commercial lighting, stage lighting and decorative lighting.
4. **Inverter**: In solar inverter and uninterruptible power supply (UPS) systems, LSG65R380GT-VB can achieve efficient power conversion, improve the overall performance and reliability of the system, and is a key component of renewable energy and power storage systems.
5. **Battery Management System**: This MOSFET is suitable for battery charging and discharging management circuits. It can monitor and manage the battery usage status in real time to ensure safe and efficient battery performance. It is suitable for battery management applications in electric vehicles and portable devices.
In summary, LSG65R380GT-VB is an excellent high-voltage MOSFET, suitable for a variety of high-efficiency electronic designs, meeting the high performance and high reliability requirements of modern electronic devices.
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