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LSG65R2K5GT-VB Product details
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1. LSG65R2K5GT-VB Product Introduction
LSG65R2K5GT-VB is a single N-channel MOSFET designed for high-voltage applications and is packaged in TO252. The device has a drain-source voltage (VDS) of up to 650V, making it suitable for operation in harsh high-voltage environments. Its maximum drain current (ID) is 2A, and it has high voltage resistance and good thermal stability. LSG65R2K5GT-VB uses SJ_Multi-EPI (super junction multi-epitaxial) technology, with low on-resistance (RDS(ON) = 2300mΩ @ VGS=10V), which effectively reduces power loss and is suitable for various power supply and switching circuit applications.
LSG65R2K5GT-VB is a single N-channel MOSFET designed for high-voltage applications and is packaged in TO252. The device has a drain-source voltage (VDS) of up to 650V, making it suitable for operation in harsh high-voltage environments. Its maximum drain current (ID) is 2A, and it has high voltage resistance and good thermal stability. LSG65R2K5GT-VB uses SJ_Multi-EPI (super junction multi-epitaxial) technology, with low on-resistance (RDS(ON) = 2300mΩ @ VGS=10V), which effectively reduces power loss and is suitable for various power supply and switching circuit applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | 2300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. LSG65R2K5GT-VB Detailed parameter description
1. **Package type**: TO252
- TO252 package is a compact design, suitable for space-constrained circuits, while providing good heat dissipation performance.
2. **Channel type**: Single-N-Channel
- Suitable for efficient current control, widely used in power conversion and switching circuits.
3. **Drain-source voltage (VDS)**: 650V
- High voltage tolerance, suitable for safe and stable operation in high-voltage application environments.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a flexible gate-source voltage range to meet the needs of different circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- Ensures the reliability and stability of the device when working at high efficiency.
6. **On-resistance (RDS(ON))**: 2300mΩ @ VGS=10V
- Higher on-resistance is suitable for low power applications and can effectively reduce heat loss.
7. **Drain current (ID)**: 2A
- Maximum drain current is suitable for low power applications and can meet a variety of application requirements.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- Improves the device's electrical conductivity and thermal performance, ensuring its reliability under high frequency and high temperature conditions.
1. **Package type**: TO252
- TO252 package is a compact design, suitable for space-constrained circuits, while providing good heat dissipation performance.
2. **Channel type**: Single-N-Channel
- Suitable for efficient current control, widely used in power conversion and switching circuits.
3. **Drain-source voltage (VDS)**: 650V
- High voltage tolerance, suitable for safe and stable operation in high-voltage application environments.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a flexible gate-source voltage range to meet the needs of different circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- Ensures the reliability and stability of the device when working at high efficiency.
6. **On-resistance (RDS(ON))**: 2300mΩ @ VGS=10V
- Higher on-resistance is suitable for low power applications and can effectively reduce heat loss.
7. **Drain current (ID)**: 2A
- Maximum drain current is suitable for low power applications and can meet a variety of application requirements.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- Improves the device's electrical conductivity and thermal performance, ensuring its reliability under high frequency and high temperature conditions.
Domain and module applications：
III. Application fields and module examples
1. **Switching power supply (SMPS)**
LSG65R2K5GT-VB can be used as a high-voltage switch in the switching power supply to ensure high efficiency of power conversion. It is suitable for various types of AC/DC and DC/DC converters to improve the overall efficiency of the system.
2. **Electric vehicle (EV) battery management**
In the battery management system of electric vehicles, this MOSFET can be used for battery charging and discharging control, optimize battery performance, and ensure high efficiency and safety.
3. **LED lighting drive circuit**
LSG65R2K5GT-VB is suitable for LED drive circuits, which can ensure stability in high-power applications, reduce power consumption, and thus extend the service life of LEDs.
4. **Motor control system**
In motor drive applications, this device can be used as an efficient switching element to provide fast response and precise current control to improve the efficiency of the motor.
5. **Uninterruptible Power Supply (UPS)**
This device can be used for power switching and battery management in UPS systems to ensure reliable power supply to the system during power failures and optimize energy conversion.
6. **Renewable Energy Inverter**
LSG65R2K5GT-VB is suitable for solar inverters, supporting high-voltage and high-power DC/AC conversion, promoting the effective use of renewable energy, and contributing to green energy.
1. **Switching power supply (SMPS)**
LSG65R2K5GT-VB can be used as a high-voltage switch in the switching power supply to ensure high efficiency of power conversion. It is suitable for various types of AC/DC and DC/DC converters to improve the overall efficiency of the system.
2. **Electric vehicle (EV) battery management**
In the battery management system of electric vehicles, this MOSFET can be used for battery charging and discharging control, optimize battery performance, and ensure high efficiency and safety.
3. **LED lighting drive circuit**
LSG65R2K5GT-VB is suitable for LED drive circuits, which can ensure stability in high-power applications, reduce power consumption, and thus extend the service life of LEDs.
4. **Motor control system**
In motor drive applications, this device can be used as an efficient switching element to provide fast response and precise current control to improve the efficiency of the motor.
5. **Uninterruptible Power Supply (UPS)**
This device can be used for power switching and battery management in UPS systems to ensure reliable power supply to the system during power failures and optimize energy conversion.
6. **Renewable Energy Inverter**
LSG65R2K5GT-VB is suitable for solar inverters, supporting high-voltage and high-power DC/AC conversion, promoting the effective use of renewable energy, and contributing to green energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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