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LSG65R1K6GT-VB Product details

Product introduction:

LSG65R1K6GT-VB Product Introduction

LSG65R1K6GT-VB is a high voltage N-channel power MOSFET in TO252 package, designed for high voltage applications. With a maximum drain-source voltage (VDS) of 650V and capable of handling drain currents (ID) of up to 2A, the device is suitable for high voltage power supplies and power electronic equipment. Its on-resistance (RDS(ON)) is 2300mΩ at a gate-source voltage of 10V. Although this on-resistance is relatively high, its excellent switching performance and thermal stability make it suitable for a variety of applications. LSG65R1K6GT-VB uses SJ_Multi-EPI technology to ensure its stability and reliability in high temperature and high frequency environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 2A 2300mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 2A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 2A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
LSG65R1K6GT-VB Detailed parameter description

- **Model**: LSG65R1K6GT-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Application fields and module examples

LSG65R1K6GT-VB MOSFET is widely used in the following fields and modules:

1. **Switching power supply**: This MOSFET plays an important role in high-voltage AC-DC and DC-DC converters, which can achieve efficient power conversion and is suitable for industrial and consumer power applications.

2. **Motor control**: LSG65R1K6GT-VB can effectively drive DC motors and stepper motors, and is suitable for control systems of power tools, household appliances and electric vehicles, providing reliable current management.

3. **Inverter**: In renewable energy systems, such as solar inverters, this MOSFET can be used to convert DC power to AC power to improve system efficiency and promote the use of renewable energy.

4. **LED drive circuit**: This MOSFET can be used for high-power LED driving to ensure stable output current. It is widely used in commercial and industrial lighting to meet high brightness requirements.

5. **Battery Management System**: In battery charge and discharge management, LSG65R1K6GT-VB can control the current flow to ensure the safety of charging and discharging, which is suitable for electric vehicles and energy storage system applications.

Through these applications, LSG65R1K6GT-VB has become an indispensable component in high-voltage power supply and power conversion systems with its high voltage and good switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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