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LSG65R1K6GF-VB Product details
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Product Introduction
LSG65R1K6GF-VB is a high voltage single N-channel MOSFET designed for demanding applications with a maximum drain-source voltage of 650V and a maximum gate-source voltage of 30V. The device is packaged in TO252 and provides excellent thermal performance and reliability. Its turn-on voltage (Vth) is 3.5V and the on-resistance (RDS(ON)) is 2300mΩ at VGS of 10V, which is suitable for low power applications. LSG65R1K6GF-VB adopts SJ_Multi-EPI technology, with excellent high frequency characteristics and thermal stability, suitable for a variety of power management and control applications.
LSG65R1K6GF-VB is a high voltage single N-channel MOSFET designed for demanding applications with a maximum drain-source voltage of 650V and a maximum gate-source voltage of 30V. The device is packaged in TO252 and provides excellent thermal performance and reliability. Its turn-on voltage (Vth) is 3.5V and the on-resistance (RDS(ON)) is 2300mΩ at VGS of 10V, which is suitable for low power applications. LSG65R1K6GF-VB adopts SJ_Multi-EPI technology, with excellent high frequency characteristics and thermal stability, suitable for a variety of power management and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | 2300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2300mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2300mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and modules
1. **High-voltage power converter**: LSG65R1K6GF-VB is suitable for high-voltage power converters. It can work stably under high voltage conditions and is widely used in switching power supplies, adapters and chargers.
2. **Motor drive**: This MOSFET can be used in motor drive circuits, especially in small motor or stepper motor control. It can provide reliable current control and is widely used in home appliances, automation equipment and electric vehicles.
3. **LED drive**: LSG65R1K6GF-VB is very suitable for driving LED lighting systems. It can efficiently control the current of LEDs to achieve high brightness and high efficiency lighting. It is suitable for commercial and industrial lighting.
4. **Power inverter**: In the field of renewable energy and power electronics, this MOSFET can be used in inverters to convert DC power into AC power, support solar and wind power systems, and improve energy conversion efficiency.
5. **Power management and monitoring**: This device can be used in power management modules to help monitor and manage power flow. It is suitable for battery management systems and various electronic devices to provide efficient and reliable power solutions.
1. **High-voltage power converter**: LSG65R1K6GF-VB is suitable for high-voltage power converters. It can work stably under high voltage conditions and is widely used in switching power supplies, adapters and chargers.
2. **Motor drive**: This MOSFET can be used in motor drive circuits, especially in small motor or stepper motor control. It can provide reliable current control and is widely used in home appliances, automation equipment and electric vehicles.
3. **LED drive**: LSG65R1K6GF-VB is very suitable for driving LED lighting systems. It can efficiently control the current of LEDs to achieve high brightness and high efficiency lighting. It is suitable for commercial and industrial lighting.
4. **Power inverter**: In the field of renewable energy and power electronics, this MOSFET can be used in inverters to convert DC power into AC power, support solar and wind power systems, and improve energy conversion efficiency.
5. **Power management and monitoring**: This device can be used in power management modules to help monitor and manage power flow. It is suitable for battery management systems and various electronic devices to provide efficient and reliable power solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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