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LSG11N70-VB Product details
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Product Introduction
LSG11N70-VB is a high-performance N-channel power MOSFET designed in TO252 package, optimized for high voltage and high current applications. Its rated drain-source voltage (VDS) is 700V, which can effectively cope with power requirements under high voltage conditions. The device has an on-resistance (RDS(ON)) of 390mΩ at a gate voltage (VGS) of 10V and a maximum drain current (ID) of 11A, ensuring excellent performance in a variety of applications. LSG11N70-VB adopts SJ_Multi-EPI technology, providing excellent thermal performance and reliability, suitable for power management and power conversion in various modern electronic devices.
LSG11N70-VB is a high-performance N-channel power MOSFET designed in TO252 package, optimized for high voltage and high current applications. Its rated drain-source voltage (VDS) is 700V, which can effectively cope with power requirements under high voltage conditions. The device has an on-resistance (RDS(ON)) of 390mΩ at a gate voltage (VGS) of 10V and a maximum drain current (ID) of 11A, ensuring excellent performance in a variety of applications. LSG11N70-VB adopts SJ_Multi-EPI technology, providing excellent thermal performance and reliability, suitable for power management and power conversion in various modern electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | 390mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: LSG11N70-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 390mΩ (@ VGS=10V)
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: LSG11N70-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 390mΩ (@ VGS=10V)
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power converter**: LSG11N70-VB is very suitable for AC-DC and DC-DC converters, especially in situations where high voltage needs to be handled, such as power adapters, chargers and switching power supplies, to achieve efficient energy conversion and stable output.
2. **Industrial motor control**: This MOSFET can be widely used in industrial automation systems to control the start, run and stop of motors, providing stable drive under high voltage and high current.
3. **LED drive circuit**: LSG11N70-VB can be used as a switching element in high-power LED drive circuits to effectively control the current output of LEDs, ensure safe and efficient operation under high voltage, and is suitable for lighting applications.
4. **Power management system**: In power distribution and management systems, LSG11N70-VB can be used as a switching element to control high-voltage loads and improve the overall efficiency and reliability of the system.
5. **Renewable Energy Systems**: Suitable for solar inverters and wind power generation systems, this device can achieve efficient power conversion under high voltage and high current conditions, improving the performance of renewable energy equipment.
With its high voltage and high current handling capabilities, the LSG11N70-VB MOSFET plays a key role in modern electronic devices, providing efficient and reliable solutions for power management, lighting control and industrial applications.
1. **High-voltage power converter**: LSG11N70-VB is very suitable for AC-DC and DC-DC converters, especially in situations where high voltage needs to be handled, such as power adapters, chargers and switching power supplies, to achieve efficient energy conversion and stable output.
2. **Industrial motor control**: This MOSFET can be widely used in industrial automation systems to control the start, run and stop of motors, providing stable drive under high voltage and high current.
3. **LED drive circuit**: LSG11N70-VB can be used as a switching element in high-power LED drive circuits to effectively control the current output of LEDs, ensure safe and efficient operation under high voltage, and is suitable for lighting applications.
4. **Power management system**: In power distribution and management systems, LSG11N70-VB can be used as a switching element to control high-voltage loads and improve the overall efficiency and reliability of the system.
5. **Renewable Energy Systems**: Suitable for solar inverters and wind power generation systems, this device can achieve efficient power conversion under high voltage and high current conditions, improving the performance of renewable energy equipment.
With its high voltage and high current handling capabilities, the LSG11N70-VB MOSFET plays a key role in modern electronic devices, providing efficient and reliable solutions for power management, lighting control and industrial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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