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LSG11N65-VB Product details

Product introduction:

1. LSG11N65-VB Product Introduction

LSG11N65-VB is a high-performance single N-channel MOSFET designed for high-voltage applications. It adopts TO252 package and provides a maximum drain-source voltage (VDS) of 650V, which is suitable for a variety of industrial and consumer electronics applications. The device has a maximum drain current (ID) of 11A and an on-resistance (RDS(ON)) of 370mΩ at a VGS of 10V, ensuring efficient switching performance and low power consumption. Manufactured using SJ_Multi-EPI technology, the LSG11N65-VB excels in thermal performance and switching speed, making it an ideal choice for power management, drive and control systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 11A 370mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. LSG11N65-VB Detailed parameter description

- **Device type**: N-channel MOSFET
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS = 10V
- **Drain current (ID)**: 11A
- **Technology type**: SJ_Multi-EPI
- **Maximum power dissipation (Ptot)**: 65W
- **Junction temperature range (Tj)**: -55°C to +150°C

Domain and module applications:

3. Application fields and module description

1. **Power converter**
- LSG11N65-VB excels in switching power supply (SMPS) design and is suitable for high voltage and medium current applications. It can efficiently control voltage and current, suitable for various power adapters and chargers, improve energy efficiency and reduce power consumption.

2. **Motor drive**
- This MOSFET can be used for motor control, especially for driving DC motors and stepper motors. Its 650V operating voltage is suitable for high-voltage motor drive, and can provide stable current output for efficient motor control.

3. **Lighting control**
- LSG11N65-VB is widely used in control modules for LED lighting and lamps. It can effectively manage the driving current of LEDs, ensure the stability and efficiency of lighting equipment, and is suitable for home and commercial lighting systems.

4. **Inverters and Renewable Energy**
- The device has important applications in solar inverters and wind power generation systems, ensuring efficient conversion and management of electrical energy, and is an ideal choice in the field of renewable energy.

5. **Electrical Control Systems**
- LSG11N65-VB is also suitable for various electrical control devices, such as relays and switching circuits, and can provide reliable performance in high-voltage environments to ensure safe and stable operation of equipment.

Through its excellent performance and wide applicability, LSG11N65-VB is an ideal choice for high-voltage, low-current applications, and can meet the needs of a variety of industrial and consumer electronics fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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