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LSG11N65F-VB Product details
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LSG11N65F-VB Product Introduction
LSG11N65F-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium current applications. The device has a maximum drain-source voltage (VDS) of 650V, and a gate-source voltage (VGS) that can vary within the range of ±30V, with good electrical characteristics and thermal stability. Its gate threshold voltage (Vth) is 3.5V, which can effectively control the switching state. At VGS = 10V, the on-resistance (RDS(ON)) is only 370mΩ, and the maximum drain current (ID) is 11A, which is suitable for various power electronics applications.
LSG11N65F-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium current applications. The device has a maximum drain-source voltage (VDS) of 650V, and a gate-source voltage (VGS) that can vary within the range of ±30V, with good electrical characteristics and thermal stability. Its gate threshold voltage (Vth) is 3.5V, which can effectively control the switching state. At VGS = 10V, the on-resistance (RDS(ON)) is only 370mΩ, and the maximum drain current (ID) is 11A, which is suitable for various power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of LSG11N65F-VB
1. **Package type**: TO252
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 370mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 11A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
1. **Package type**: TO252
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 370mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 11A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
Domain and module applications：
Applications and module examples
1. **Power converter**: LSG11N65F-VB is widely used in switching power supplies and DC-DC converters. Its high voltage tolerance and low on-resistance enable it to effectively reduce energy loss during power conversion and improve overall energy efficiency.
2. **Motor drive**: This MOSFET is suitable for motor drive modules and can provide efficient current control to ensure the stability and reliability of the motor during startup and operation, especially for small and medium-sized motors such as fans and power tools.
3. **Inverter**: LSG11N65F-VB performs well in inverter applications, especially in renewable energy systems (such as solar inverters), which can convert DC power to AC power, achieve efficient energy utilization, and improve system performance.
4. **LED driver**: In LED driver, LSG11N65F-VB can be used to regulate current, provide stable output, ensure high efficiency and long life of LED lighting system, and is suitable for various lighting solutions.
5. **Battery management system**: LSG11N65F-VB can be used as a switching element in battery management system to control the battery charging and discharging process, ensure safe operation of battery under high voltage, and extend battery life.
As a high-performance MOSFET, LSG11N65F-VB has become one of the indispensable components in modern power electronic equipment with its excellent electrical characteristics and wide application fields.
1. **Power converter**: LSG11N65F-VB is widely used in switching power supplies and DC-DC converters. Its high voltage tolerance and low on-resistance enable it to effectively reduce energy loss during power conversion and improve overall energy efficiency.
2. **Motor drive**: This MOSFET is suitable for motor drive modules and can provide efficient current control to ensure the stability and reliability of the motor during startup and operation, especially for small and medium-sized motors such as fans and power tools.
3. **Inverter**: LSG11N65F-VB performs well in inverter applications, especially in renewable energy systems (such as solar inverters), which can convert DC power to AC power, achieve efficient energy utilization, and improve system performance.
4. **LED driver**: In LED driver, LSG11N65F-VB can be used to regulate current, provide stable output, ensure high efficiency and long life of LED lighting system, and is suitable for various lighting solutions.
5. **Battery management system**: LSG11N65F-VB can be used as a switching element in battery management system to control the battery charging and discharging process, ensure safe operation of battery under high voltage, and extend battery life.
As a high-performance MOSFET, LSG11N65F-VB has become one of the indispensable components in modern power electronic equipment with its excellent electrical characteristics and wide application fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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