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LSG11N65E-VB Product details

Product introduction:

1. LSG11N65E-VB Product Introduction
LSG11N65E-VB is a high-voltage single N-channel MOSFET in TO252 package, designed for high-voltage and high-efficiency power management applications. The device has a drain-source withstand voltage (VDS) of up to 650V and a gate-source voltage (VGS) range of ±30V, ensuring its reliability under a variety of operating conditions. Its threshold voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 370mΩ @ VGS=10V, and maximum drain current (ID) is 11A. With its SJ_Multi-EPI technology, LSG11N65E-VB provides excellent thermal stability and high power handling capabilities, and is widely used in power conversion, motor control and high-voltage drive.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 11A 370mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. LSG11N65E-VB Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C

Domain and module applications:

3. Applicable fields and application modules
1. **High-efficiency switching power supply (SMPS)**
LSG11N65E-VB is very suitable for use in high-efficiency switching power supplies and can work efficiently at a high voltage of 650V. Its low on-resistance characteristics can significantly reduce energy loss and improve power conversion efficiency. It is widely used in computer power supplies and industrial power supply equipment.

2. **Motor drive control**
This MOSFET can be used in motor drive circuits, especially in medium-power motors that need to control 11A current. It provides efficient performance in motor control for power tools, home appliances and industrial equipment to ensure smooth operation of the motor.

3. **High-voltage DC-DC Converter**
LSG11N65E-VB can be used in high-voltage DC-DC converters, especially for converting high-voltage DC power to other voltage levels. Its high voltage and high current handling capabilities make it very suitable for applications in electric vehicles and renewable energy systems.

4. **LED Driver**
In high-voltage LED lighting applications, this MOSFET can effectively drive high-power LED lamps, provide stable current, and ensure the brightness and life of the LED. Suitable for commercial and industrial lighting systems.

5. **Battery Management System**
LSG11N65E-VB can be used for battery charge and discharge control in battery management systems, especially in high-voltage battery packs. Its reliability and high voltage capability ensure the safety of the battery during the charge and discharge process, suitable for electric vehicles and energy storage solutions.

In short, LSG11N65E-VB, with its high voltage and high efficiency, is an ideal choice for power management and control applications, ensuring the reliability and stability of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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