LSG11N60-VB Product details
Product introduction:
**LSG11N60-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for high voltage applications. The device has a drain-source voltage (VDS) of up to 600V, suitable for a variety of high voltage electronic circuits. Its gate-source voltage (VGS) range is ±30V, and the threshold voltage (Vth) is 3.5V, ensuring good switching performance. At VGS=10V, the on-resistance (RDS(ON)) is 380mΩ, which can effectively reduce power loss. LSG11N60-VB adopts SJ_Multi-EPI technology, has excellent thermal performance and reliability, and is suitable for high-efficiency power conversion and control applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameter| Description|
|------------------|----------------------------------------|
| **Model** | LSG11N60-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 600V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 380mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 11A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications:
1. **Switching power supply**:
LSG11N60-VB is very suitable for high-voltage switching power supply design, such as power adapters and DC-DC converters. Its high VDS value and low on-resistance characteristics can effectively improve system efficiency and reduce energy loss.
2. **Motor drive**:
In motor control applications, this MOSFET can be used in inverters and motor drivers to provide efficient power management for precise motor speed and torque control.
3. **Lighting control**:
LSG11N60-VB can be applied to LED drive circuits, especially in high-voltage LED lighting systems, to ensure stable current output, thereby improving lighting effects and reliability.
4. **Industrial equipment**:
This MOSFET can be widely used in industrial automation equipment, such as high-voltage power modules and control circuits, to adapt to various high-voltage and high-power industrial environments.
5. **Renewable Energy**:
In solar inverters and wind energy systems, the LSG11N60-VB can be used for high-voltage DC-DC conversion to optimize energy conversion efficiency and support the use of renewable energy.
Through these application examples, the LSG11N60-VB shows its wide applicability in high-voltage, high-power fields, especially in power electronic devices that require high efficiency and stability.
Technical support:
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