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LSG11N60-VB Product details

Product introduction:

Product Introduction

**LSG11N60-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for high voltage applications. The device has a drain-source voltage (VDS) of up to 600V, suitable for a variety of high voltage electronic circuits. Its gate-source voltage (VGS) range is ±30V, and the threshold voltage (Vth) is 3.5V, ensuring good switching performance. At VGS=10V, the on-resistance (RDS(ON)) is 380mΩ, which can effectively reduce power loss. LSG11N60-VB adopts SJ_Multi-EPI technology, has excellent thermal performance and reliability, and is suitable for high-efficiency power conversion and control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 600V 3.5V 11A 380mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 600V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 600V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

| Parameter| Description|
|------------------|----------------------------------------|
| **Model** | LSG11N60-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 600V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 380mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 11A |
| **Technology** | SJ_Multi-EPI |

Domain and module applications:

Application fields and module examples

1. **Switching power supply**:
LSG11N60-VB is very suitable for high-voltage switching power supply design, such as power adapters and DC-DC converters. Its high VDS value and low on-resistance characteristics can effectively improve system efficiency and reduce energy loss.

2. **Motor drive**:
In motor control applications, this MOSFET can be used in inverters and motor drivers to provide efficient power management for precise motor speed and torque control.

3. **Lighting control**:
LSG11N60-VB can be applied to LED drive circuits, especially in high-voltage LED lighting systems, to ensure stable current output, thereby improving lighting effects and reliability.

4. **Industrial equipment**:
This MOSFET can be widely used in industrial automation equipment, such as high-voltage power modules and control circuits, to adapt to various high-voltage and high-power industrial environments.

5. **Renewable Energy**:
In solar inverters and wind energy systems, the LSG11N60-VB can be used for high-voltage DC-DC conversion to optimize energy conversion efficiency and support the use of renewable energy.

Through these application examples, the LSG11N60-VB shows its wide applicability in high-voltage, high-power fields, especially in power electronic devices that require high efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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