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LSG11N60F-VB Product details
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Product Introduction
LSG11N60F-VB is a high-performance N-channel MOSFET in a TO252 package, designed for high voltage and high-efficiency applications. The device has a drain-source voltage (VDS) of 600V, making it ideal for high-voltage power conversion and switching circuits. Its threshold voltage (Vth) is 3.5V, ensuring effective conduction under appropriate gate drive voltage. The on-resistance (RDS(ON)) is 380mΩ@VGS=10V, providing lower conduction losses, significantly improving energy efficiency and reducing heat generation. The maximum continuous current (ID) is 11A, suitable for a variety of medium-power applications. Using SJ_Multi-EPI technology, this MOSFET excels in thermal performance and reliability, can operate under harsh working conditions, and is an ideal choice for modern high-voltage power supply designs.
LSG11N60F-VB is a high-performance N-channel MOSFET in a TO252 package, designed for high voltage and high-efficiency applications. The device has a drain-source voltage (VDS) of 600V, making it ideal for high-voltage power conversion and switching circuits. Its threshold voltage (Vth) is 3.5V, ensuring effective conduction under appropriate gate drive voltage. The on-resistance (RDS(ON)) is 380mΩ@VGS=10V, providing lower conduction losses, significantly improving energy efficiency and reducing heat generation. The maximum continuous current (ID) is 11A, suitable for a variety of medium-power applications. Using SJ_Multi-EPI technology, this MOSFET excels in thermal performance and reliability, can operate under harsh working conditions, and is an ideal choice for modern high-voltage power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Description** |
|----------------------|--------------------------|
| **Model** | LSG11N60F-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-Source Voltage (VDS)** | 600V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 380mΩ @ VGS=10V |
| **Maximum Continuous Current (ID)** | 11A |
| **Technology** | SJ_Multi-EPI |
| **Parameter** | **Description** |
|----------------------|--------------------------|
| **Model** | LSG11N60F-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-Source Voltage (VDS)** | 600V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 380mΩ @ VGS=10V |
| **Maximum Continuous Current (ID)** | 11A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications：
Applicable fields and module examples
LSG11N60F-VB is widely used in multiple fields and modules, including:
1. **Power management**: In switching power supplies (SMPS) and DC-DC converters (DC-DC), this MOSFET can efficiently control current and achieve high-efficiency power conversion with its low on-resistance, which is suitable for various consumer electronics, industrial power supplies and computer power modules.
2. **Motor drive**: As a switching element in the motor drive circuit, LSG11N60F-VB can be used to control DC motors and stepper motors, suitable for the drive systems of automation equipment, electric vehicles and household appliances, and provide efficient motor control solutions.
3. **LED drive**: This MOSFET is suitable for efficient drive circuits in LED lighting and display systems, ensuring that LEDs can achieve stable brightness output, and is widely used in commercial lighting and stage lighting equipment.
4. **Inverter**: In solar inverter and uninterruptible power supply (UPS) systems, LSG11N60F-VB can achieve efficient power conversion and improve system reliability, and is suitable for renewable energy and emergency power management.
5. **Battery Management System**: This device is suitable for battery charging and discharging management circuits, can monitor and manage battery usage, ensure safe and efficient battery performance, and is widely used in battery management solutions for electric vehicles and portable devices.
In short, LSG11N60F-VB is an excellent high-voltage MOSFET suitable for a variety of high-efficiency electronic designs, meeting the high performance and high reliability requirements of modern electronic devices.
LSG11N60F-VB is widely used in multiple fields and modules, including:
1. **Power management**: In switching power supplies (SMPS) and DC-DC converters (DC-DC), this MOSFET can efficiently control current and achieve high-efficiency power conversion with its low on-resistance, which is suitable for various consumer electronics, industrial power supplies and computer power modules.
2. **Motor drive**: As a switching element in the motor drive circuit, LSG11N60F-VB can be used to control DC motors and stepper motors, suitable for the drive systems of automation equipment, electric vehicles and household appliances, and provide efficient motor control solutions.
3. **LED drive**: This MOSFET is suitable for efficient drive circuits in LED lighting and display systems, ensuring that LEDs can achieve stable brightness output, and is widely used in commercial lighting and stage lighting equipment.
4. **Inverter**: In solar inverter and uninterruptible power supply (UPS) systems, LSG11N60F-VB can achieve efficient power conversion and improve system reliability, and is suitable for renewable energy and emergency power management.
5. **Battery Management System**: This device is suitable for battery charging and discharging management circuits, can monitor and manage battery usage, ensure safe and efficient battery performance, and is widely used in battery management solutions for electric vehicles and portable devices.
In short, LSG11N60F-VB is an excellent high-voltage MOSFET suitable for a variety of high-efficiency electronic designs, meeting the high performance and high reliability requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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