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LSG11N60E-VB Product details
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1. LSG11N60E-VB Product Introduction
LSG11N60E-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium power applications. Its maximum drain-source voltage is 600V, the drain current can reach 11A, and it has a low on-resistance (380mΩ @ VGS=10V), which can effectively reduce power loss. LSG11N60E-VB uses SJ_Multi-EPI (super junction multi-epitaxial) technology, has good thermal stability and high-frequency performance, and is suitable for use in harsh working environments.
LSG11N60E-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium power applications. Its maximum drain-source voltage is 600V, the drain current can reach 11A, and it has a low on-resistance (380mΩ @ VGS=10V), which can effectively reduce power loss. LSG11N60E-VB uses SJ_Multi-EPI (super junction multi-epitaxial) technology, has good thermal stability and high-frequency performance, and is suitable for use in harsh working environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. LSG11N60E-VB Detailed parameter description
1. **Package type**: TO252
- TO252 package has a compact design, suitable for space-constrained applications, while providing effective heat dissipation performance.
2. **Channel type**: Single-N-Channel
- Supports efficient current control, suitable for a variety of power supply and switching circuit applications.
3. **Drain-source voltage (VDS)**: 600V
- With high voltage tolerance, suitable for safe and stable operation in high voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a flexible gate-source voltage range, suitable for various circuit design requirements.
5. **Threshold voltage (Vth)**: 3.5V
- Ensures the reliability and stability of the device when working at high efficiency.
6. **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- Lower on-resistance reduces power loss and improves system efficiency.
7. **Drain current (ID)**: 11A
- Maximum drain current is suitable for medium power applications.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- This technology improves the device's electrical and thermal performance, ensuring its reliability under high frequency and high temperature conditions.
1. **Package type**: TO252
- TO252 package has a compact design, suitable for space-constrained applications, while providing effective heat dissipation performance.
2. **Channel type**: Single-N-Channel
- Supports efficient current control, suitable for a variety of power supply and switching circuit applications.
3. **Drain-source voltage (VDS)**: 600V
- With high voltage tolerance, suitable for safe and stable operation in high voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a flexible gate-source voltage range, suitable for various circuit design requirements.
5. **Threshold voltage (Vth)**: 3.5V
- Ensures the reliability and stability of the device when working at high efficiency.
6. **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- Lower on-resistance reduces power loss and improves system efficiency.
7. **Drain current (ID)**: 11A
- Maximum drain current is suitable for medium power applications.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- This technology improves the device's electrical and thermal performance, ensuring its reliability under high frequency and high temperature conditions.
Domain and module applications：
III. Application fields and module examples
1. **Switching power supply (SMPS)**
LSG11N60E-VB performs well in switching power supply, can effectively control power conversion, and is suitable for various power supply requirements, such as AC/DC power supply and DC/DC converter, ensuring high efficiency and stability.
2. **Electric vehicle (EV) power management**
This MOSFET can be used in the power management system of electric vehicles to optimize the battery charging and discharging process and ensure the high efficiency and safety of electric vehicles under different load conditions.
3. **LED lighting drive circuit**
LSG11N60E-VB can be used in LED drive circuits to ensure the stability and efficiency of LEDs in high-power applications, while reducing heat loss and extending the service life of LEDs.
4. **Motor drive and control**
In motor control systems, this MOSFET can be used as a switching element to provide fast response and high-efficiency current control to improve the overall efficiency of the motor.
5. **Uninterruptible Power Supply (UPS)**
This device can be used for battery management and power switching in UPS systems to ensure reliable power supply to the system during power outages and achieve efficient energy conversion.
6. **Renewable Energy Inverter**
LSG11N60E-VB is suitable for solar inverters, supports efficient conversion of DC to AC, meets high voltage and high power requirements, and promotes the effective use of renewable energy.
1. **Switching power supply (SMPS)**
LSG11N60E-VB performs well in switching power supply, can effectively control power conversion, and is suitable for various power supply requirements, such as AC/DC power supply and DC/DC converter, ensuring high efficiency and stability.
2. **Electric vehicle (EV) power management**
This MOSFET can be used in the power management system of electric vehicles to optimize the battery charging and discharging process and ensure the high efficiency and safety of electric vehicles under different load conditions.
3. **LED lighting drive circuit**
LSG11N60E-VB can be used in LED drive circuits to ensure the stability and efficiency of LEDs in high-power applications, while reducing heat loss and extending the service life of LEDs.
4. **Motor drive and control**
In motor control systems, this MOSFET can be used as a switching element to provide fast response and high-efficiency current control to improve the overall efficiency of the motor.
5. **Uninterruptible Power Supply (UPS)**
This device can be used for battery management and power switching in UPS systems to ensure reliable power supply to the system during power outages and achieve efficient energy conversion.
6. **Renewable Energy Inverter**
LSG11N60E-VB is suitable for solar inverters, supports efficient conversion of DC to AC, meets high voltage and high power requirements, and promotes the effective use of renewable energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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