LSG07N60-VB Product details
Product introduction:
LSG07N60-VB is a high voltage single N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) can reach 600V, and the gate-source voltage (VGS) range is ±30V, which is suitable for various power electronics applications. The gate threshold voltage (Vth) of the device is 3.5V, which can effectively conduct at a lower gate voltage. The on-resistance (RDS(ON)) of LSG07N60-VB is 650mΩ at VGS = 10V, and the maximum drain current (ID) is 7A. The use of SJ_Multi-EPI technology ensures the high efficiency performance and excellent thermal stability of this MOSFET.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 7A | 650mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
1. **Package type**: TO263
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 650mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 7A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
Domain and module applications:
1. **Switching power supply**: LSG07N60-VB is widely used in switching power supplies (SMPS) to achieve efficient power conversion at high voltage. Its low on-resistance helps reduce energy loss during power conversion and is suitable for power adapters, industrial power supplies and other equipment.
2. **Inverter**: This MOSFET is suitable for inverters, especially in solar and wind power generation systems, which can efficiently convert DC power to AC power and support the efficient use of renewable energy.
3. **Motor drive**: LSG07N60-VB can be used in motor drive applications as a switching element to provide current control, suitable for starting and speed regulation of various motors, and ensure safe and stable operation of the motor under load.
4. **Battery management system**: In the battery management module, LSG07N60-VB can be used for charge and discharge control to ensure safe operation of the battery under high voltage conditions, improve battery efficiency and system reliability.
5. **LED driver**: LSG07N60-VB is also used in high-power LED lighting systems. Through precise current control, energy loss is reduced to achieve efficient lighting solutions.
LSG07N60-VB is a MOSFET that combines high voltage, low on-resistance and good thermal stability. It is widely used in modern power electronic equipment to meet various high-efficiency and high-reliability requirements.
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