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LSG04N70A-VB Product details

Product introduction:

Product Introduction

**LSG04N70A-VB** is a high voltage N-Channel MOSFET in TO252 package, designed for high voltage applications. Its drain-source voltage (VDS) is up to 700V, suitable for a variety of electronic circuits requiring high voltage. The device has a gate-source voltage (VGS) range of ±30V and a threshold voltage (Vth) of 3.5V. At VGS=10V, the on-resistance (RDS(ON)) is 1000mΩ, which can support efficient power transmission. LSG04N70A-VB uses SJ_Multi-EPI technology, providing excellent thermal performance and reliability, and is very suitable for high-efficiency power conversion and control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 700V 3.5V 5A 1000mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 700V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 700V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

| Parameter| Description|
|------------------|----------------------------------------|
| **Model** | LSG04N70A-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 700V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 1000mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 5A |
| **Technology** | SJ_Multi-EPI |

Domain and module applications:

Applications and Module Examples

1. **High Voltage Power Supply**:
The LSG04N70A-VB is suitable for a variety of high voltage switching power supplies, including power adapters and high-efficiency DC-DC converters. The high VDS value of this MOSFET enables it to operate on the high voltage side of the converter, effectively reducing energy losses.

2. **LED Driver**:
In LED lighting and driver applications, the LSG04N70A-VB can be used in high voltage LED driver circuits to provide stable current control and achieve higher light efficiency.

3. **Motor Control**:
This MOSFET also performs well in motor control systems, especially when used to control high voltage motors, providing good switching characteristics and efficient energy transfer.

4. **Industrial Automation Equipment**:
The LSG04N70A-VB can be used in power modules for industrial automation equipment to support high voltage and high power drive requirements, such as automated production lines and robots.

5. **Renewable Energy Systems**:
In solar inverters and wind power generation systems, this MOSFET can be used for high-voltage DC-DC conversion, helping to improve energy conversion efficiency and system performance.

Through these application examples, it can be seen that the LSG04N70A-VB has a wide range of application potential in the high-voltage and high-power fields, especially for power electronic equipment that requires high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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