LSG04N70A-VB Product details
Product introduction:
**LSG04N70A-VB** is a high voltage N-Channel MOSFET in TO252 package, designed for high voltage applications. Its drain-source voltage (VDS) is up to 700V, suitable for a variety of electronic circuits requiring high voltage. The device has a gate-source voltage (VGS) range of ±30V and a threshold voltage (Vth) of 3.5V. At VGS=10V, the on-resistance (RDS(ON)) is 1000mΩ, which can support efficient power transmission. LSG04N70A-VB uses SJ_Multi-EPI technology, providing excellent thermal performance and reliability, and is very suitable for high-efficiency power conversion and control applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameter| Description|
|------------------|----------------------------------------|
| **Model** | LSG04N70A-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 700V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 1000mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 5A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications:
1. **High Voltage Power Supply**:
The LSG04N70A-VB is suitable for a variety of high voltage switching power supplies, including power adapters and high-efficiency DC-DC converters. The high VDS value of this MOSFET enables it to operate on the high voltage side of the converter, effectively reducing energy losses.
2. **LED Driver**:
In LED lighting and driver applications, the LSG04N70A-VB can be used in high voltage LED driver circuits to provide stable current control and achieve higher light efficiency.
3. **Motor Control**:
This MOSFET also performs well in motor control systems, especially when used to control high voltage motors, providing good switching characteristics and efficient energy transfer.
4. **Industrial Automation Equipment**:
The LSG04N70A-VB can be used in power modules for industrial automation equipment to support high voltage and high power drive requirements, such as automated production lines and robots.
5. **Renewable Energy Systems**:
In solar inverters and wind power generation systems, this MOSFET can be used for high-voltage DC-DC conversion, helping to improve energy conversion efficiency and system performance.
Through these application examples, it can be seen that the LSG04N70A-VB has a wide range of application potential in the high-voltage and high-power fields, especially for power electronic equipment that requires high performance and reliability.
Technical support:
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