中文
English
LSG04N65-VB Product details
Back to previous pageProduct introduction：
Product Introduction
LSG04N65-VB is a high-voltage N-channel MOSFET in a TO252 package, designed for high-efficiency and high-power applications. The device has a drain-source voltage (VDS) of 650V, making it ideal for power conversion and switching circuits that require high voltage resistance. Its threshold voltage (Vth) is 3.5V, ensuring effective conduction under appropriate gate drive voltage. The on-resistance (RDS(ON)) is 1000mΩ@VGS=10V. Although the on-resistance is relatively high, it is suitable for applications with specific low power. The maximum continuous current (ID) is 5A, which is suitable for low to medium power applications. Using SJ_Multi-EPI technology, this MOSFET excels in thermal performance and reliability, is suitable for stable operation in harsh environments, and is a reliable choice in modern power supply design.
LSG04N65-VB is a high-voltage N-channel MOSFET in a TO252 package, designed for high-efficiency and high-power applications. The device has a drain-source voltage (VDS) of 650V, making it ideal for power conversion and switching circuits that require high voltage resistance. Its threshold voltage (Vth) is 3.5V, ensuring effective conduction under appropriate gate drive voltage. The on-resistance (RDS(ON)) is 1000mΩ@VGS=10V. Although the on-resistance is relatively high, it is suitable for applications with specific low power. The maximum continuous current (ID) is 5A, which is suitable for low to medium power applications. Using SJ_Multi-EPI technology, this MOSFET excels in thermal performance and reliability, is suitable for stable operation in harsh environments, and is a reliable choice in modern power supply design.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Description** |
|----------------------|--------------------------|
| **Model** | LSG04N65-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-Source Voltage (VDS)** | 650V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 1000mΩ @ VGS=10V |
| **Maximum Continuous Current (ID)** | 5A |
| **Technology** | SJ_Multi-EPI |
| **Parameter** | **Description** |
|----------------------|--------------------------|
| **Model** | LSG04N65-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-Source Voltage (VDS)** | 650V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 1000mΩ @ VGS=10V |
| **Maximum Continuous Current (ID)** | 5A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications：
Application fields and module examples
LSG04N65-VB is widely used in multiple fields and modules, including:
1. **Power management**: In switching power supplies (SMPS) and DC-DC converters (DC-DC), this MOSFET can effectively control current. Although the on-resistance is high, its 650V withstand voltage characteristics make it suitable for power conversion applications with low power requirements. It is widely used in consumer electronics, industrial power supplies and small power modules.
2. **Motor control**: As a switching element in the motor drive circuit, LSG04N65-VB can control low-power DC motors. It is suitable for motor control of household appliances, toys and small automation equipment, providing an effective motor drive solution.
3. **LED drive**: This MOSFET can be used in the drive circuit of LED lighting and display systems, especially in applications requiring a high withstand voltage of 650V, suitable for commercial lighting and decorative lighting, to ensure that the LED can achieve stable brightness output.
4. **Inverter**: In small solar inverters and uninterruptible power supply (UPS) systems, LSG04N65-VB can achieve effective power conversion. Although its maximum current is 5A, it can still be applied to small home solar systems to improve system reliability.
5. **Battery Management System**: This device is suitable for battery charge and discharge management circuits to monitor and manage battery usage, ensure safe and efficient battery performance, and is suitable for low-power battery management solutions.
In short, LSG04N65-VB is a high-voltage MOSFET suitable for a variety of low- to medium-power electronic designs, meeting the needs of modern electronic devices for high performance and high reliability.
LSG04N65-VB is widely used in multiple fields and modules, including:
1. **Power management**: In switching power supplies (SMPS) and DC-DC converters (DC-DC), this MOSFET can effectively control current. Although the on-resistance is high, its 650V withstand voltage characteristics make it suitable for power conversion applications with low power requirements. It is widely used in consumer electronics, industrial power supplies and small power modules.
2. **Motor control**: As a switching element in the motor drive circuit, LSG04N65-VB can control low-power DC motors. It is suitable for motor control of household appliances, toys and small automation equipment, providing an effective motor drive solution.
3. **LED drive**: This MOSFET can be used in the drive circuit of LED lighting and display systems, especially in applications requiring a high withstand voltage of 650V, suitable for commercial lighting and decorative lighting, to ensure that the LED can achieve stable brightness output.
4. **Inverter**: In small solar inverters and uninterruptible power supply (UPS) systems, LSG04N65-VB can achieve effective power conversion. Although its maximum current is 5A, it can still be applied to small home solar systems to improve system reliability.
5. **Battery Management System**: This device is suitable for battery charge and discharge management circuits to monitor and manage battery usage, ensure safe and efficient battery performance, and is suitable for low-power battery management solutions.
In short, LSG04N65-VB is a high-voltage MOSFET suitable for a variety of low- to medium-power electronic designs, meeting the needs of modern electronic devices for high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
