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LSG04N65A-VB Product details
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1. LSG04N65A-VB Product Introduction
LSG04N65A-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium power applications. The device has a maximum drain-source voltage of 650V and a drain current of up to 5A, with good switching performance and low on-resistance (1000mΩ @ VGS=10V). LSG04N65A-VB uses SJ_Multi-EPI (Super Junction Multi-Epi) technology, which can operate stably under high temperature and high frequency conditions, and is widely used in power management and high-efficiency circuits.
LSG04N65A-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium power applications. The device has a maximum drain-source voltage of 650V and a drain current of up to 5A, with good switching performance and low on-resistance (1000mΩ @ VGS=10V). LSG04N65A-VB uses SJ_Multi-EPI (Super Junction Multi-Epi) technology, which can operate stably under high temperature and high frequency conditions, and is widely used in power management and high-efficiency circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. LSG04N65A-VB Detailed parameter description
1. **Package type**: TO252
- The TO252 package is a compact design that is easy to use in space-constrained applications while providing good heat dissipation performance.
2. **Channel type**: Single-N-Channel
- Supports efficient current control and is suitable for a variety of power supply and switching circuit applications.
3. **Drain-source voltage (VDS)**: 650V
- High voltage tolerance enables it to work safely and stably in a high voltage environment.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a flexible gate-source voltage range to suit a variety of circuit design requirements.
5. **Threshold voltage (Vth)**: 3.5V
- Ensures the reliability and stability of the device while operating at high efficiency.
6. **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- Lower on-resistance reduces power loss and improves system efficiency.
7. **Drain current (ID)**: 5A
- Maximum drain current is suitable for medium power applications.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- This technology improves the device's electrical and thermal performance, ensuring its reliability under high frequency and high temperature conditions.
1. **Package type**: TO252
- The TO252 package is a compact design that is easy to use in space-constrained applications while providing good heat dissipation performance.
2. **Channel type**: Single-N-Channel
- Supports efficient current control and is suitable for a variety of power supply and switching circuit applications.
3. **Drain-source voltage (VDS)**: 650V
- High voltage tolerance enables it to work safely and stably in a high voltage environment.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a flexible gate-source voltage range to suit a variety of circuit design requirements.
5. **Threshold voltage (Vth)**: 3.5V
- Ensures the reliability and stability of the device while operating at high efficiency.
6. **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- Lower on-resistance reduces power loss and improves system efficiency.
7. **Drain current (ID)**: 5A
- Maximum drain current is suitable for medium power applications.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- This technology improves the device's electrical and thermal performance, ensuring its reliability under high frequency and high temperature conditions.
Domain and module applications：
III. Application fields and module examples
1. **Switching power supply (SMPS)**
LSG04N65A-VB is very suitable for use in switching power supplies, which can efficiently control power conversion and meet various power supply requirements, such as AC/DC power supplies and DC/DC converters.
2. **Electric vehicle (EV) power management**
This MOSFET can be used in the power management system of electric vehicles to optimize the battery charging and discharging process and ensure the high efficiency and safety of electric vehicles under different load conditions.
3. **LED lighting drive circuit**
LSG04N65A-VB can be used in LED drive circuits to ensure the stability and efficiency of LEDs in high-power applications, while reducing heat loss and extending the service life of LEDs.
4. **Motor drive and control**
In motor control systems, this MOSFET can be used as a switching element to provide fast response and high-efficiency current control to improve the overall efficiency of the motor.
5. **Uninterruptible Power Supply (UPS)**
This device can be used for battery management and power switching in UPS systems to ensure reliable power supply to the system during power outages and provide efficient energy conversion.
6. **Renewable Energy Inverter**
LSG04N65A-VB is suitable for solar inverters, supports efficient conversion of DC to AC, meets high voltage and high power requirements, and realizes the effective use of renewable energy.
1. **Switching power supply (SMPS)**
LSG04N65A-VB is very suitable for use in switching power supplies, which can efficiently control power conversion and meet various power supply requirements, such as AC/DC power supplies and DC/DC converters.
2. **Electric vehicle (EV) power management**
This MOSFET can be used in the power management system of electric vehicles to optimize the battery charging and discharging process and ensure the high efficiency and safety of electric vehicles under different load conditions.
3. **LED lighting drive circuit**
LSG04N65A-VB can be used in LED drive circuits to ensure the stability and efficiency of LEDs in high-power applications, while reducing heat loss and extending the service life of LEDs.
4. **Motor drive and control**
In motor control systems, this MOSFET can be used as a switching element to provide fast response and high-efficiency current control to improve the overall efficiency of the motor.
5. **Uninterruptible Power Supply (UPS)**
This device can be used for battery management and power switching in UPS systems to ensure reliable power supply to the system during power outages and provide efficient energy conversion.
6. **Renewable Energy Inverter**
LSG04N65A-VB is suitable for solar inverters, supports efficient conversion of DC to AC, meets high voltage and high power requirements, and realizes the effective use of renewable energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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