LSG02N65-VB Product details
Product introduction:
LSG02N65-VB is a single N-channel MOSFET designed for high voltage applications. It adopts TO252 package and has excellent performance and stability. Its drain-source voltage (VDS) is as high as 650V, which is suitable for use in high voltage environments. The gate voltage (VGS) range of this device is ±30V, with good safety and reliability. Due to the use of planar technology, the on-resistance (RDS(ON)) of LSG02N65-VB is 3440mΩ (@ VGS=4.5V) and 4300mΩ (@ VGS=10V). Although the on-resistance is high, it still performs well in specific applications. The rated drain current of this MOSFET is 2A, making it an ideal choice for various high-voltage electrical equipment.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameter Name| Value|
|--------------------|---------------------------------|
| Package Type| TO252 |
| MOSFET Configuration| Single N-Channel|
| Drain-Source Voltage (VDS) | 650V |
| Gate Voltage (VGS) | ±30V |
| Threshold Voltage (Vth) | 3.5V |
| On-Resistance (RDS(ON)) | 3440mΩ @ VGS = 4.5V |
| On-Resistance (RDS(ON)) | 4300mΩ @ VGS = 10V |
| Continuous Drain Current (ID) | 2A |
| Technology| Plannar |
Domain and module applications:
1. **Switching Power Supply (SMPS)**
LSG02N65-VB is suitable for switching power supply design, can work efficiently under high voltage conditions, and is suitable for power management systems that require high voltage and low power consumption. Its high voltage resistance characteristics enable it to effectively cope with high voltage shocks during power conversion.
2. **Motor Drive Control**
In motor drive systems, LSG02N65-VB can be used to control the switching and speed regulation of low-power motors, especially in small household appliances and consumer electronics products, to achieve smooth motor start and stop.
3. **Lighting System**
LSG02N65-VB can be used for switch control in LED lighting systems, suitable for high-voltage LED driving, can ensure safe and reliable operation in high voltage environments, and improve the performance of lighting products.
4. **High-voltage relays and switches**
In high-voltage relay and switch applications, this MOSFET can be used to control and switch currents, and is suitable for high-voltage switches and protection circuits in electrical systems to ensure safe and stable current management.
In summary, the wide application of LSG02N65-VB in high-voltage power supplies, switch control, and motor drives demonstrates its importance and reliability in electrical equipment.
Technical support:
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