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LSF11N70-VB Product details
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LSF11N70-VB Product Introduction
LSF11N70-VB is a high voltage, high performance single N-channel MOSFET in TO220F package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) reaches 700V and gate-source voltage (VGS) is ±30V, suitable for use in various power electronics applications. The gate threshold voltage (Vth) of the device is 3.5V, ensuring that it can be effectively turned on at lower voltages. The on-resistance (RDS(ON)) of LSF11N70-VB is 450mΩ at VGS = 10V, and the maximum drain current (ID) is 11A. Using SJ_Multi-EPI technology, this MOSFET has excellent thermal stability and reliability, and can operate for a long time under harsh working conditions.
LSF11N70-VB is a high voltage, high performance single N-channel MOSFET in TO220F package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) reaches 700V and gate-source voltage (VGS) is ±30V, suitable for use in various power electronics applications. The gate threshold voltage (Vth) of the device is 3.5V, ensuring that it can be effectively turned on at lower voltages. The on-resistance (RDS(ON)) of LSF11N70-VB is 450mΩ at VGS = 10V, and the maximum drain current (ID) is 11A. Using SJ_Multi-EPI technology, this MOSFET has excellent thermal stability and reliability, and can operate for a long time under harsh working conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 11A | 450mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description of LSF11N70-VB
1. **Package type**: TO220F
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 700V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 450mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 11A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
1. **Package type**: TO220F
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 700V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 450mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 11A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
Domain and module applications：
Application fields and module examples
1. **Power converter**: LSF11N70-VB is widely used in high-voltage switching power supplies. It can achieve efficient power conversion at high voltage and is suitable for industrial power supplies, computer power supplies and other fields. Its low on-resistance helps reduce energy loss and improve power efficiency.
2. **Inverter**: This MOSFET is suitable for solar inverters and wind inverters. It can work stably under high voltage and high current conditions, help achieve efficient conversion from DC to AC, and support the application of renewable energy.
3. **Motor drive**: In motor control systems, LSF11N70-VB can be used as a switching element to provide precise current control, suitable for speed regulation and starting of various motors. Its good thermal performance ensures safe and stable operation of the motor under high load conditions.
4. **Battery management system**: In the battery management module, this MOSFET can be used to control the charging and discharging process, ensure that the battery works safely and effectively at high voltage, and improve the battery life and system reliability.
5. **Lighting control**: LSF11N70-VB can be applied to high-power LED lighting drive circuits. It can control the working state of LED lamps through efficient switches, reduce energy loss, and achieve efficient lighting solutions.
LSF11N70-VB is a MOSFET that combines high voltage, low on-resistance and good thermal stability. It is widely used in modern power electronic equipment and can meet various high-performance and high-reliability requirements.
1. **Power converter**: LSF11N70-VB is widely used in high-voltage switching power supplies. It can achieve efficient power conversion at high voltage and is suitable for industrial power supplies, computer power supplies and other fields. Its low on-resistance helps reduce energy loss and improve power efficiency.
2. **Inverter**: This MOSFET is suitable for solar inverters and wind inverters. It can work stably under high voltage and high current conditions, help achieve efficient conversion from DC to AC, and support the application of renewable energy.
3. **Motor drive**: In motor control systems, LSF11N70-VB can be used as a switching element to provide precise current control, suitable for speed regulation and starting of various motors. Its good thermal performance ensures safe and stable operation of the motor under high load conditions.
4. **Battery management system**: In the battery management module, this MOSFET can be used to control the charging and discharging process, ensure that the battery works safely and effectively at high voltage, and improve the battery life and system reliability.
5. **Lighting control**: LSF11N70-VB can be applied to high-power LED lighting drive circuits. It can control the working state of LED lamps through efficient switches, reduce energy loss, and achieve efficient lighting solutions.
LSF11N70-VB is a MOSFET that combines high voltage, low on-resistance and good thermal stability. It is widely used in modern power electronic equipment and can meet various high-performance and high-reliability requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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