LSE70R420GT-VB Product details
Product introduction:
**LSE70R420GT-VB** is a high voltage N-Channel MOSFET in a TO263 package. The device has a rated drain-source voltage (VDS) of up to 700V, making it ideal for high voltage applications. Its gate-source voltage (VGS) range is ±30V and its threshold voltage (Vth) is 3.5V, providing good switching characteristics. Its on-resistance (RDS(ON)) is 450mΩ at VGS=10V, allowing high-efficiency power conversion. LSE70R420GT-VB uses SJ_Multi-EPI technology, which has excellent thermal performance and reliability, and is suitable for a variety of high-voltage switching and power management applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 11A | 450mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| Parameter| Description|
|------------------|----------------------------------------|
| **Model** | LSE70R420GT-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 700V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 450mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 11A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications:
1. **Power Management**:
The LSE70R420GT-VB is suitable for high-efficiency switching power supply designs, including power adapters and power converters. The high VDS value of this MOSFET enables it to effectively reduce energy losses when operating on the high-voltage side of the converter.
2. **Motor Drive**:
In motor control applications, such as inverters and motor drives, this MOSFET can effectively control the starting and speed regulation of the motor, providing higher power density and system efficiency.
3. **Industrial Automation**:
The device can be used in the drive and control circuits of industrial equipment, especially in situations requiring high voltage and high power, such as industrial machinery and robots.
4. **Renewable Energy Systems**:
In solar inverters and wind energy conversion systems, the LSE70R420GT-VB can be used for high-voltage DC-DC conversion to optimize energy conversion efficiency.
5. **Electric Vehicle Charging**:
This MOSFET can be used in the charging system of electric vehicles as a high-voltage conversion and control element to achieve fast charging.
Through the above application examples, it can be seen that the LSE70R420GT-VB has a wide range of applicability in modern electronic devices, especially in high-voltage and high-power application scenarios.
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